简介：TheenergybanddiagramandchargedistributionoftheunintentionaldopedAIGaN/GaN/AIGaN/GaNdoubleheterostructurewereobtainedbyself-consistentPoissonSchroedingercalculations.Theseverebandtiltingandhightwo-dimensionalelectrongas(2DEG)densitymainlyattributetothelargeinternalpolarizationintensity,whichisc/osetoalinearfunctionorAlcomposition.TheinfluenceorAlcompositionisinvestigated.Theresultsshowthatbandtiltingenlargesand2DEGgainswithAIcomposition,andtwo-dimensionalholegasoccurswhenAIcompositionreachesacertainextent.TheinfluenceorAlcompositionandtwo-dimensionalholegas(2DHG)ondevicesisdiscussed.

简介：采用大面积半绝缘型GaN（semi—insultingGaN，SI—GaN）晶体制备了电流型GaN辐射探测器，研究了探测器伏安（I—V）特性、7射线响应特性、灵敏度、电荷收集效率、脉冲响应等物理性能。结果表明，晶体表面与金属形成了良好的欧姆接触，探测器在600V偏压下暗电流低于400pA，电荷收集效率高于40％，探测器脉冲响应时间在ns量级。

简介：Theeffectofpiezoelectricityonphononpropertiesandthermalconductivityofgalliumnitride(GaN)nanofilmsistheoreticallyinvestigated.TheelasticitymodelisutilizedtoderivethephononpropertiesinspatiallyconfinedGaNnanofilms.ThepiezoelectricconstitutiverelationinGaNnanofilmsistakenintoaccountincalculatingthephonondispersionrelation.Themodifiedphonongroupvelocityandphonondensityofstateaswellasthephononthermalconductivityarealsoobtainedduetothecontributionofpiezoelectricity.TheoreticalresultsshowthatthepiezoelectricityinGaNnanofilmscanchangesignificantlythephononpropertiessuchasthephonongroupvelocityanddensityofstates,resultinginthevariationofthephononthermalconductivityofGaNnanofilmsremarkably.Moreover,thepiezoelectricityofGaNcanmodifythedependenceofthermalconductivityonthegeometricalsizeandtemperature.TheseresultscanbeusefulinmodelingthethermalperformanceintheactiveregionofGaN-basedelectronicdevices.

简介：TB432002042855微腔对有机发光的影响的研究=Microcavityeffectsonorganicemissionlight[刊,中]/初国强,高劲松,朱万彬(中科院长春光机所.吉林,长春(130022))∥光学仪器.—2001,23(5/6).—202-205

简介：薄膜物理与制备技术研究对于惯性约束聚变(ICF)实验具有重要意义，2003年开展的研究工作主要包括几个方面的内容：低压等离子体化学气相沉积(LPPCVD)法微球CH涂层及掺杂(溴等)技术研究；脉冲激光沉积(PLD)法Fe／Al合金薄膜研制；磁控溅射法Au／Gd，Ti／A1，Ti／Cr支撑薄膜研制；碳氢氮(CxNyH1-x-y)薄膜制备技术研究。相应主要结果如下：(1)利用低压等离子体化学气相沉积(LPPCVD)装置深入考察了以反式-2-丁烯如下：

简介：TB432003053760双通偏振干涉滤光片的研究=Researchofdouble-passpolarizationinterferencefilters[刊,中]/贺银波(浙江大学光电系,现代光学仪器国家重点实验室.浙江,杭州(310027)),熊静懿…//光学学报-2003,23(1).-89-94研究了等厚度双能偏振干涉滤光片,在此基础上提出了新型双通偏振干涉滤光片,并分析了单通、双通以及新型双通偏振干涉滤光片的光谱特性。结果表明,新型双通偏振干涉滤光片不仅具有更好的光谱特性,而且能

简介：TheeffectsofgrowthtimeonthestructureandmorphologyofcubicGaNnucleationlayersonGaAs(001)substratesbymetalorganicchemicalvapordeposition(MOCVD)havebeeninvestigatedusingasynchrotronX-raydiffraction(XRD).TheXRDresultsshowthattheGaN111reflectionsat54.75°inχareameasurablecomponent,howeverthe002reflectionsparalleltoGaAs(001)surfacearenotdetected.TheXRDΦscansandpolefiguresgiveaconvincingproofthattheGaNnucleationlatyersshowexactlythecubicsymmetricalstructure.Thecoherencelengthsalongtheclose-packed<111>directionestuimatedfromthe111peakarenanometerorderofmagnitude,Theoptimalphotoluminescence(PL)spectrumwasobtainedfromthecubicGaNepilayerdepositedonthenucleationlayerfor60sec.

简介：Wereportonthegrowthofthehigh-qualityGaNgrainonar-planesapphiresubstratebyusingaself-organizedSiNinterlayerasaselectivegrowthmask.Transmissionelectronmicroscopy,scanningelectronmicroscopy,andRamanspectroscopyareusedtorevealtheeffectofSiNontheovergrowna-planeGaNgrowth.TheSiNlayereffectivelyterminatesthepropagationofthethreadingdislocationandbasalplanestackingfaultsduringa-planeGaNregrowththroughtheinterlayer,resultinginthewindowregionshrinkingfromarectangletoa"blackhole".Furthermore,strongyellowluminescence(YL)inthenonpolarplaneandveryweakYLinthesemipolarplaneontheGaNgrainisrevealedbycathodoluminescence,suggestingthatC-involveddefectsareresponsiblefortheYL.

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简介：O484.599042623用喇曼散射光谱估算纳米Ge晶粒平均尺寸=Estimationofcrystal—sizeofnano—GebyRamanscatteringspectra[刊,中]/王印月,郑树凯,杨映虎,郭永平（兰州大学物理系.甘肃,兰州（730000））,奇莉,甘润今（北京机械工业学院基础部.北京（100085））//光学学报.—1998,18（9）.—1265—1268用射频共溅射技术和真空退火方法制备了埋入SiO2基底中的纳米Ge复合膜(nc—Ge/SiO2。测量了不同温度退火后该复合膜的喇曼散射光谱,其结果与晶体Ge的喇曼谱相比,纳米Ge的喇曼峰位红移峰形变宽;用喇曼谱的参数计算了纳米Ge晶粒的平均尺寸。所得

简介：O484.52003053772厚度具有线性变化的吸收平板或膜层的非相干透射率和反射率=Incoherenttransmissivityandreflectivityofanabsorbingplaneplateorlayerwithlinearvariationsinthickness[刊,中]/钟迪生(辽宁大学物理系.辽宁,沈阳(110036))//应用光学.-2002,23(1).-40-43计算了垂直入射下厚度具有线性变化的吸收平板样品的非相干透射率和反射率(正面和反面),给出了直接确定无基底样品以及透明基底上薄膜能量(强度)系数的精确表达式。图3参3(郑锦玉)

简介：O484.52000031969TiO2薄膜厚度及其光学常数的测量=DeterminationofthicknessandopticalconstantsofTiO2film[刊,中]/王德育,袁春伟（东南大学分子与生物分子电子学实验室.江苏,南京（210096））//东南大学学报.—1999,29（5）.—105-108描述了非线性回归模型在TiO2薄膜的光学常数及其厚度测量中的应用。利用薄膜在可见光范围内的光谱

简介：O484.52001053428光谱法求解极化聚合物薄膜的光电系数=Calcldationofelectro-coefficientsofpoledpolymerfilmsusingspectralmethod[刊,中]/孟凡青,马常宝,张光辉,吕孟凯,袁多荣,房昌水,许东(山东大学晶体材料国家重点实验室.山东,济南(250100)),任诠(山东大学光电子信息与工程系。山东,济南(250100))//半导体光电.—2000,21(6).—402-404,409

简介：证明了夹住椭圆薄膜的整个边界不是使薄膜的椭圆性成立的必要条件.特别地,给出了两类边界条件.分别叫做部分自由边界条件和共轭边界条件,它们使得椭圆薄膜具有椭圆性但其边界没有被完全夹住.这些结果纠正了Slicaru在下面的文章中所犯的错误:Ontheellipticityofthemiddlesurfaceofashell,C.R.Acad.Sci.Paris,t.322.Serie,p.97-100.1996.最后,通过例子说明,当椭圆薄膜的边界不限制任何条件时,使应变能有限的位移向量空间可非常大.

简介：O484.5//TN304.0552002042890常规与纳米金刚石薄膜介电性能的比较=Comparisonofdielectricpropertiesbetweenconventionalandnanocrystallinediamondfilms[刊,中]/奚正蕾,莘海维,张志明,凌行,沈荷生,戴永兵,万永中,陆鸣(上海交通大学微电子技术研究所.上海(200030))∥微细加工技术.—2001,(4).—50-55

简介：O484.52003021238硅(001)衬底上生长的ZnO薄膜的AFM研究=AFMstudyofZnOthinfilmsonSi(001)substrates[刊,中]/章建隽(浙江大学信息科学与电子工程系.浙江,杭州(310028)),杨爱龄//电子显微学报.—2002,21(1).—39-42对采用电子束反应蒸镀方法低温下在硅(001)衬底上外延生长的ZnO薄膜的表面构像进行了原子力显微镜(AFM)观察,分析研究了不同的衬底温度对薄膜表面形貌及结构特性的影响。在250℃衬底温度下获得的ZnO

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简介：ThinheavilyMg-dopedInGaNandGaNcompoundcontactlayerisusedtoformNi/AuOhmiccontacttop-GaN.ThegrowthconditionsofthecompoundcontactlayeranditseffectontheperformanceofNi/AuOhmiccontacttop-GaNareinvestigated.Itisconfirmedthatthespecificcontactresistivitycanbelowerednearlytwoordersbyoptimizingthegrowthconditionsofcompoundcontactlayer.WhentheflowrateratiobetweenMgandGagassourcesofp++-InGaNlayeris10.6%andthethicknessofp++-InGaNlayeris3nm,thelowestspecificcontactresistivityof3.98×10-5?·cm2isachieved.Inaddition,theexperimentalresultsindicatethatthespecificcontactresistivitycanbefurtherloweredto1.07×10-7?·cm2byoptimizingthealloyingannealingtemperatureto520℃.

简介：O484.496042588金属-有机聚合物复合薄膜研究进展=Progressontheresearehofmetal-organicpolymercompositefilms[刊,中]/张兵临,张兰,马会中,H.Phllips,毕兆琪,李运钧(郑州大学物理系.河南,郑州(450052))∥功能材料.—1995,26(6).—497—501金属-有机聚合物复合薄膜是一种新型薄膜材料。由于它有着特殊的光电物理特性,无论是从基础研究的观点来看,还是就其潜在的应用价值而言,均

简介：TB4397063841太阳光控膜的实验研究=Experimentalresearchonthefilmsofcontrollingsolarradiation[刊,中]/焦小浇,胡文旭,陈玲(陕西省物理研究所.陕西,西安(710077)),孙玉晴(陕西师范大学实验中心.陕西,西安(710062))∥太阳能学报.—1996,17(4).—330—335