简介：ＡｎＩｎｔｅｌｌｉｇｅｎｔＤｅｓｉｇｎｏｆＥｌｅｃｔｒｏｎＬｅｎｓＳｙｓｔｅｍ￥ＬｅｔＷｅｉ；ＴｏｎｇＬｉｎｓｕ＆ＷｕＳｈｅｎｇｌｉ（ＥｌｅｃｔｒｏｎｉｃＥｎｇｉｎｅｅｒｉｎｇＤｅｐａｒｔｍｅｎｔｏｆＳｏｕｔｈｅａｓｔＵｎｉｖｅｒｓｉｔｙ，Ｎａｍｉｎ...

简介：Wetheoreticallypresenttheintrinsiclimitstoelectronmobilityinthemodulation-dopedAlGaN/GaNtwo-dimensionalelectrongas(2DEG)duetoeffectsincludingacousticdeformationpotential(DP)scattering,piezoelectricscattering(PE),andpolar-opticphononscattering(POP).WefindthatDEandPEarethemoresignificantlimitingfactorsatintermediatetemperaturesof40Kto250K,whilePOPbecomesdominantasroomtemperatureisapproached.Detailednumericalresultsarepresentedforthechangeofelectronmobilitywithrespecttotemperatureandcarrierdensity.Weconcludethatthesethreetypesofphononscattering,whicharegenerallydeterminedbythematerialpropertiesbutnotthetechnicalprocessing,arehardlimitstothe2DEGmobility.

简介：Theheatedprocessofrawmaterialsforelectrontrappingmaterials(ETM)isinvestigatedbythermo-analysismethod.Thetemperaturerangesofrawmaterialsexperiencedsomephysicalandchemicalchangeprocesses,suchasdehydration,organicsolventremoval,crystalsulphurburning,oxidationofalkalineearthsulfidesandsolidphasereaction(rareearthdoped)andsoon,areobtained.TheexperimentalresultsalsoshowthatthepresenceoftraceoxygeninshieldedgasisveryharmfultopreparetheETM.Therawmaterialthermo-analysisresultsprovideveryimportantexperimentalreferenceforoptimizingtheETMpreparationtechniques.

简介：Experimentally,theelectrondrageffectoncarbonnanotubesurfaceinflowingliquidswasinvestigated.Itwasfoundthatelectriccurrentcouldbegeneratedinmetalliccarbonnanotubesimmersedintheliquids.CarbonnanotubesweresynthesizedonSisubstratebyhotfilamentchemicalvapordeposition.Theexperimentalresultsshowedthattheflow-inducedcurrentonthesurfaceofcarbonnanotubefilmswascloselydependedontheflowrate,concentration,propertiesandtemperatureofliquids.Theflow-inducedcurrentwasincreasedwiththeincreasingofflowrate,concentrationandtemperatureofliquids.Theobtainedresultswerediscussedindetail.

简介：ＥｌｅｃｔｒｏｎＭｏｂｉｌｉｔｙｉｎＴｒｉｓ（８－Ｈｙｄｒｏｘｙｑｕｉｎｏｌｉｎｏｌａｔｏ）ＡｌｕｍｉｎｕｍＴｈｉｎＦｉｌｍＢａｓｅｄｏｎＳｉｌｉｃｉｕｍ①②ＣＨＥＮＢａｉｊｕｎ，ＬＩＵＳｈｉｙｏｎｇ（ＳｔａｔｅＫｅｙＬａｂ．ｏｎＩｎｔｅｇｒａｔｅｄ...

简介：形成和传导性的电影的激活试验性地被学习。电源供应，peak-to-peak30V三角侧面电压，被用于分别地包含0.25%，0.5%，和1%钯的三种传导性的电影。在实验，我们处于不同条件对比了相关参数的值，在阳极面板上观察了发光的点，处理并且分析，并且比较了位置和发光的点的数量相关数据。我们得到了有阀值价值Uth的结论。排放电流我当设备电压Uf比Uth大时，e将很快增加。并且排放电流我e能被设备电压Uf控制。阳极面板上的发光的点的位置与设备电压Uf被联系。CLC数字TN141

简介：Incontrastwiththeconventionalinjectorconsistingofdcgun,chopper,subharmonicbuncherand/orfundamentalbuncher,amicrowaveguncancooperatewithanalphamagnetasamorecompacthighbrightnessinjectorforthededicatedrflinearacceleratorsdrivinginfraredfreeelectronlasers(FELs).SuchaconcepthasbeenputintopracticeintheMARKIIIFELandwillbeusedintheBeijingFreeElectronLaser(BFEL)aswell.Inthispaper,thephasespread,energyspread,energyspread,emittancegrowthandintensityvariationofasingleelectronmicrobunchinsuchanFELacceleratorsystemareinvestigatedusingSUPERFISHandPARMELA.

简介：Atechniqueofelectronaccelerationinthecone-shapedstationarylaserfieldisproposed.Anelectronaccelerationinthislaserisstudied,whichshowsthatthereisnoelectronbunchingbutthereexistselectroncaptureinthislaserfield.

简介：AnumericalschemesapplicabletothedirectsolutionofBoltzmanntransportequation(BTE)invertical-SOINMOSFETareinvestigatedbymeansofthefiniteelementanalysis(FEA).Thesolutiongivestheelectrondistributionfunction,electrostaticpotential,carriersconcentration,driftvelocity,averageenergyanddraincurrentbydirectlysolvingtheBTEandthePoissonequationself-consistency.TheresultshowsthatthedirectnumericalsolutionoftheBTEwiththeaidofFEAandverticalSOINMOSFETisapromisingapproachforultrashortchanneltransistorsmodeling.

简介：当电子运输层被学习，ZnO的表面形态学与ZnO在不同退火拍摄温度和聚合物太阳能电池(PSC)的表演。低温度大音阶的第五音胶化处理了ZnO电影在更高的温度比那有更光滑的表面，它为P3HT与3.66%的力量变换效率(PCE)导致最好的光电的性能:PC61BM基于的太阳能电池。与增加退火的温度，光电的表演首先死亡然后增加。它能被归功于到接口区域，传导性和ZnO电影的表面精力和设备的系列抵抗的协同作用效果。

简介：Usingthesingleparticletheoryandthenon--flexibilitycollisionmodelofelectronandphoton,theinfluenceoftheuncapturedelectronsontheenergyconversionefficiencyofmulti--photonnonlinearComptonscatteringintheextrastationarylaser--plasmaisinvestigated.Itshowsthatinextrastationarylaser—plasma,theuncapturedelectronsmaketheAtoofthescatteringfrequencyofthemulti--photonComptonfalldownwiththeincreasesoftheincidentradiationelectronspeed,thematerialsoftheincidentcollisionofelectronandphoton,andthenumberofthephotonswhichworkwiththeelectronsatthesametime.Underthemodulationoftheuncapturedelectronstothelaserfield,theenergyconversionefficiencybetweenelectronsandphotonswillfalldownwiththeincreaseoftheelectronincidentradiationspeed,usingthelow--powerelectronsforincidentsource,thelosscanbeefficientlyreduced.

简介：Aprocesssuitableforproductiononalargescaleofcoldlightmirrorforfilmprojectorisintroduced.DepositionparametersrequiredforproducingTiO2/SiO2opticalmultialyersystemsbyelectronbeamevaporationofTiO2andSiO2startingmaterialsareinvestigated.Manufactureandtechniquesofcoldmirrorandtheadhesion,stability,wearandcorrosionresistanceofcoldmirrorbythisprocessarediscussed.Theresultshowsthatcoldmirrorproducedhasgoodopticalpropertiesandbetteradhesion.

简介：用在高精力的电子和热放射光子之间散布的反的康普顿的模型，散布高精力的电子的多光子康普顿上的散发热的光子的影响被学习。精力损失，力量损失，轻抵抗和光热形成的高精力的电子迫使放射的结果表演都与电子的真空洞的温度T4成正比，Lorentz因素2个高精力的电子，电子的散布的节和与高精力的电子同时行动的光子的数字。为由使用在高精力的电子和热放射光子之间散布的一个光子康普顿减少高精力的电子的精力损失的一个好方法被建议。

简介：Thedevicestructureandtechnicalprocessingsofquasi-planarself-alignedsiliconavalancheelectronemissionarrayarcintroduced.Theprocessingstepattheedgeofelectronemissionregionisabout10nmonlyandthewidthofself-alignedcurrentchannelofshallowAsimplantationisabout3μm.ItsI-Vcharacteristicsshowalargerlinearregionandlowerseriesresistancethanthatoftheprevioussiliconavalancheelectronemissiondevices.Someoftheelectronemissioncharacteristicsarealsodiscussedinthispaper.

简介：Theevolutionoftheelectronphaseorbitsbasedonthemulti-photonnonlinearComptonscatteringwiththehighpowerlaser-plasmaisdiscussedbyusingKroll-Morton-Rosenbluththeory.Therandomevolutionoftheun-capturedelectronphaseorbitsfromperiodicitytonon-periodicityisfoundaftertheenergyhasbeenexchangedbetweentheelectronandphotons.Withtheincreaseoftheabsorbedphotonnumbernbyanelectron,thisevolutionwillbemoreandmoreintense,whilewhichisrapidlydecreasedwiththeenhancementofthecollisionnon-flexibilityξandtheirinitialspeedsoftheelectronsandphotons,butthisevolutionislowerthanthatinthehighpowerlaserfield.Whentheelectronsarecapturedbythelaserfield,theevolutionisfinished,andtheelectronswillstablytransport,andthephotonsdon'tprovidetheenergyfortheseelectronsanymore.

简介：轧了射出二极管(LEDs)，薄AlInN层在堵住层(EBL)的电子前面插入了的基于的蓝光试验性地被学习。插入薄EBL能改进轻产量力量并且减少效率，这被发现与常规AlGaN对应物相比低垂。基于数字模拟和分析，当薄AlInN层被使用时，电、光的特征上的改进主要被归因于电子漏电流的减小，它在量井(QW)增加搬运人的集中。

简介：Theinvertedbottom-emittingorganiclight-emittingdevices（IBOLEDs）wereprepared,withthestructureofITO/A1（xnm）/LiF（1nm）/Bphen（40nm）/CBP：Girl（14%）：R-4b（2%）（10nm）/BCP（3nm）/CBP：Glrl（14%）：R-4b（2%）（20nm）/TCTA（10nm）/NPB（40nm）/MoO3（40nm）/A1（100rim）,wherethethicknessofelectroninjectionlayerA1（x）are0nm,2nm,3nm,4nmand5nm,respectively.Inthispaper,theelectroninjectionconditionandluminancepropertiesofinverteddeviceswereinvestigatedbychangingthethicknessofA1layerinAFLiFcompoundthinfilm.ItturnsoutthattheintroductionofA1layercanimproveelectroninjectionofthedevicesdramatically.Furthermore,thedeviceexertslowerdrivingvoltageandhighercurrentefficiencywhenthethicknessofelectroninjectionA1layeris3nm.Forexample,thecurrentefficiencyofthedevicewith3-urn-thickA1layerreaches19.75cd·A^-1whendrivingvoltageis7V,whichis1.24,1.17and17.03timeslargerthanthoseofthedeviceswith2nm,4nmand5nmA1layer,respectively.Thedevicepropertyreachesuptothelevelofcorrespondingconventionaldevice.Inaddition,allin-verteddeviceswithelectroninjectionA1layershowsuperiorstabilityofcolorcoordinateduetotheadoptionofco-evaporationemittinglayerandBCPspacer-layer,andthecolorcoordinateoftheinverteddevicewith3-nm-thickAIlayeronlychangesfrom（0.5806,0.4056）to（0.5328,0.4363）whendrivingvoltageincreasesfrom6Vto10V.