DESIGN AND RESEARCH OF QUASI-PLANAR SELF-ALIGNED SILICON AVALANCHE ELECTRON EMISSION ARRAY

(整期优先)网络出版时间:1999-01-11
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Thedevicestructureandtechnicalprocessingsofquasi-planarself-alignedsiliconavalancheelectronemissionarrayarcintroduced.Theprocessingstepattheedgeofelectronemissionregionisabout10nmonlyandthewidthofself-alignedcurrentchannelofshallowAsimplantationisabout3μm.ItsI-Vcharacteristicsshowalargerlinearregionandlowerseriesresistancethanthatoftheprevioussiliconavalancheelectronemissiondevices.Someoftheelectronemissioncharacteristicsarealsodiscussedinthispaper.