Thedevicestructureandtechnicalprocessingsofquasi-planarself-alignedsiliconavalancheelectronemissionarrayarcintroduced.Theprocessingstepattheedgeofelectronemissionregionisabout10nmonlyandthewidthofself-alignedcurrentchannelofshallowAsimplantationisabout3μm.ItsI-Vcharacteristicsshowalargerlinearregionandlowerseriesresistancethanthatoftheprevioussiliconavalancheelectronemissiondevices.Someoftheelectronemissioncharacteristicsarealsodiscussedinthispaper.