简介：AnumericalschemesapplicabletothedirectsolutionofBoltzmanntransportequation(BTE)invertical-SOINMOSFETareinvestigatedbymeansofthefiniteelementanalysis(FEA).Thesolutiongivestheelectrondistributionfunction,electrostaticpotential,carriersconcentration,driftvelocity,averageenergyanddraincurrentbydirectlysolvingtheBTEandthePoissonequationself-consistency.TheresultshowsthatthedirectnumericalsolutionoftheBTEwiththeaidofFEAandverticalSOINMOSFETisapromisingapproachforultrashortchanneltransistorsmodeling.

简介：介绍了CMOS技术发展到亚100nm所面临的挑战。针对尺寸量子化效应。建立了NMOSFET的反型层电子量子化模型，分析了反型层量子化效应对NMOSFET器件参数包括有效栅氧厚度、阈值电压等的影响。得出结论，反型层量子化效应致使反型层电子分布偏离表面。造成有效栅氧厚度的增加，阈值电压的波动达到约10％。