简介：MoleculardynamicssimulationsareperformedtoinvestigateCF3continuouslybom-bardingtheamorphoussiliconsurfacewithenergiesof10eV,50eV,100eVand150eVatnormalincidenceandroomtemperature.TheimprovedTersoff-Brennerpotentialswereused.Thesimu-lationresultsshowthatthesteady-stateetchingratesareabout0.019,0.085and0.1701for50eV,100eVand150eV,respectively.Withincreasingincidentenergy,atransitionfromC-richsurfacetoF-richsurfaceisobserved.IntheregionmodifiedbyCF3,SiFandCFspeciesaredominant.
简介：Sinteredsiliconcarbide(SiC)wasetchedbyadielectricbarrierdischargesource.Ahighvoltagebipolarpulsewasusedwithheliumgasfortheplasmageneration.OnestablefilamentplasmawasgeneratedandcouldbeusedforSiCetching.Astheprocessinggas(NF3)mixingrateincreased,thewidthanddepthoftheetchingprofilebecamenarroweranddeeper.ThedifferentiatedV-QLissajousmethodwasusedformeasuringthecapacitances(Ceq)oftheelectrodeaftertheplasmaturnedon.ThewidthoftheetchingprofilewasproportionaltoCeq.Asthecurrentpeakvalue/smxofthesubstratecurrentincreased,thevolumeremovalrateofSiCincreased.Theetchdepthwasproportionaltotheratioof/smxtoCeq.Additionally,becauseofthedifferentcharacteristicsoftheplasmadisksonSiCsubstratebythevoltagepolarity,theetchingprofilewasunstable.However,inhighNF3mixingprocess,theetchingprofilebecamestableanddeeper.
简介：Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.
简介：Simulationresultsofrougheningofnanocompositematerialsduringbothisotropicandanisotropicetchingprocessesbasedonthelevelsetmethodarepresented.Itisclearlyshownthatthepresenceoftwophaseswithdifferentetchingratesaffectsthedevelopmentofsurfaceroughnessandthatsomeroughnesscharacteristicsobeysimplescalinglaws.Inaddition,certainscalinglawsthatdescribethetimedependenceoftherootmeansquare(rms)roughnesswforvariousetchingprocessesanddifferentcharacteristicsofthenanocompositematerialsaredetermined.
简介：Neutrondetectorbasedonperforatedsiliconstructuresbackfilledwithneutronconvertingmaterialscouldbeoperatedatalowvoltageandimprovesthedetectionefficiencyofthermalneutron.Itisfoundthattheintrinsicdetectionefficiencyofthermalneutronisaffectedbyalotoffactorssuchasthegeometry,size,anddepthoftheperforationandsoon.Inthisstudy,theperforatedsiliconwaspreparedbyelectrochemicaletching.Effectofetchingcurrentongeometry,size,anddepthoftheperforatedsiliconstructuresforneutrondetectorswasalsoreported.
简介：Theetchingeffectofammonia(NH3)onthegrowthofverticallyalignednanotubes/nanofibers(CNTs)wasinvestigatedbydirect-currentplasmaenhancedchemicalvapordeposition(DC-PECVD).NH3gasetchesNicatalystlayertoformnanoscaleislandswhileNH3plasmaetchesthedepositedamorphouscarbon.BasedontheetchingeffectofNH3gasonNicatalyst,thedifferencesofgrowingbundlesofCNTsandsinglestrandCNTswerediscussed;specifically,theamountofoptimalNH3gasetchingisdifferentbetweenbundlesofCNTsandsinglestrandCNTs.IncontrasttotheCNTcarpetgrowth,thesinglestrandCNTgrowthrequiresshorteretchingtime(5min)thanlargecatalyticpatterns(10min)sincenanodotsalreadyformcatalystislandsforCNTgrowth.Throughremovingtheplasmapretreatmentprocess,thedamagefrombeingexposedathightemperaturesubstrateoccurringduringtheplasmagenerationtimeisminimized.Highresolutiontransmissionelectronmicroscopy(HTEM)showsfishbonestructureofCNTsgrownbyPECVD.
简介：多晶的ZnO电影用收音机频率磁控管在是在不同时间的sputteretched的玻璃底层上劈啪作响被准备。两ZnO谷物和root-mean-square(RMS)的尺寸粗糙减少，底层的sputteretching时间增加。更多的Zn原子在这些电影被绑在O原子，并且缺点集中与增加底层的蚀刻噼啪声的时间被减少。同时，crystallinity和c轴取向在底层的更长蚀刻噼啪声的时间被改进。在99cm1，438cm1和589cm1的拉曼山峰作为E2被识别(低)，E2(高度)和E1(LO)模式，分别地并且E1(LO)山峰蓝色的位置变在更长蚀刻噼啪声的时间。这些电影的发射度，在底层上被扔并且为10蚀刻min和20min，比在30min的更长蚀刻噼啪声的时间下面扔的电影的在可见区域是更高的。bandgap随底层的蚀刻噼啪声的时间的增加从3.23eV增加到3.27eV。
简介：ReactiveionetchingcharacteristicsofGaAs,GaSb,InPandInAsusingCl2/Arplasmahavebeeninvestigated,itisthat,etchingratesandetchingprofilesasfunctionsofetchingtime,gasflowratioandRFpower.Etchratesofabove0.45μm/rinand1.2μm/rinhavebeenobtainedinetchingofGaAsandGaSbrespectively,whileveryslowetchrates(＜40nm/rin)wereobservedinetchingofIn-containingmaterials,whichwerelinearlyincreasedwiththeappliedRFpower.EtchedsurfaceshaveremainedsmoothoverawiderangeofplasmaconditionsintheetchingofGaAs,InPandInAs,however,werepartlyblackenedinetchingofGaSbduetoaroughappearance.
简介：Amethodofmulti-beamfemtosecondlaserirradiationcombinedwithmodifiedHF-HNO_3-CH_3COOHetchingisusedfortheparallelfabricationofall-siliconplano-concavemicrolensarrays(MLAs).Thelaserbeamissplitbyadiffractiveopticalelementandfocusedbyalenstodrillmicroholesparallelyonsilicon.AnHF-HNO_3-H_2SO_4-CH_3COOHsolutionisusedtoexpandandpolishlaser-ablatedmicroholestoformmicrolenses.ComparedwiththeHF-HNO_3-CH_3COOHsolution,thesolutionwithH_2SO_4caneffectivelyreducetheetchedsurfaceroughness.ThemorphologiesofMLAsatdifferentlaserpowersandpulsenumbersareobserved.Theimagearrayformedbythesiliconmicrolensesisalsodemonstrated.
简介：Graphitic碳氮化物(g-C3有向在可见轻照耀下面的4-nitrophenol的降级的高photocatalytic活动的N4)被蚀刻的HCl准备由氨中立化列在后面。准备样品的结构，形态学，表面区域，和photocatalytic性质被学习。在处理以后，g-C3N4从几测微计减少了到几百纳米，和g-C3N4从11.5 增加了；m2/g到115 ；m2/g。同时，g-C3N4显著地在可见的光下面向4-nitrophenol的降级在处理以后被改进照耀。小粒子g-C3N4是5.7次体积g-C3为水处理和环境补习为未来应用使它成为有希望的可见轻光催化剂的N4,。
简介：ＴhepatternofITOtransparentelectrodeofpixelcellsinTFTAMLCDisacriticalstepinthemanufacturingprocessofflatpaneldisplaydevices,thedevelopmentofsuitableplasmareactiveionetchingisnecessarytoachievehighresolutiondisplay.InthisworkweinvestigatedtheAr/CF4plasmaetchingofITOasfunctionofdifferentparameters.WedemonstratedtheabilityofthisplasmatoetchITOandachievedanetchingrateofabout3.73nm/min,whichisexpectedtoincreaseforlongpumpingdownperiod,andalsothroughadditionofhydrogenintheplasma.FurthermorewedescribedtheITOetchingmechanisminAr/CF4plasma.Theinvestigationofselectivityshowedtobeverylowoversiliconnitrideandsilicondioxidebutveryhighoveraluminum.
简介：PtRu/SnO2/Ccatalystwaspreparedinapolyolprocess,followedbyreductiontreatmentandalkalineetching.X-raydiffraction,transmissionelectronmicroscopewithenergydispersivespectrometerandXrayphotoelectronspectroscopywereusedtocharacterizethemorphology,structureandcompositionofthecatalysts.COandmethanolelectro-oxidationactivitiesofthecatalystswereevaluatedbyCOstrippingvoltammetry,cyclicvoltammetryandchronoamperometrymeasurements.ReductiontreatmentofthepreparedPtRuSnO2/CcatalystinapolyolprocessinducedtheenrichmentofSnonthesurface,inhibitingmethanoldissolutionandCOadsorptiononPt.AlkalineetchingremovedSnorSnOxandthusexposedPtRuonthesurface,resultinginenhancedactivitiesforCOandmethanolelectro-oxidationduetothesynergyeffectsofPtRuonthesurfaceandSnspeciesbeneath.
简介：DyeingofPETmaterialsbytraditionalmethodspresentsseveralproblems.Plasmatechnologyhasreceivedenormousattentionasasolutionfortheenvironmentalproblemsrelatedwithtextilesurfacemodifications,andtherehasbeenarapiddevelopmentandcommercializationofplasmatechnologyoverthepastdecade.Inthiswork,thesynergisticeffectofatmosphericpressureplasmaonalkalineetchinganddeepcoloringofdyeingpropertiesonpolyethyleneterephthalate(PET)fabricsandfilmswasinvestigated.ThetopographicalchangesofthePETsurfacewereinvestigatedbyatomicforcemicroscopy(AFM)images,whichrevealedasmoothsurfacemorphologyoftheuntreatedsamplewhereasahighsurfaceroughnessfortheplasmaand/oralkalinetreatedsamples.TheeffectsofatmosphericpressureplasmaonalkalineetchingofthestructureandpropertiesofPETwereinvestigatedbymeansofdifferentialscanningcalorimetry(DSC),themainobjectiveofperformingDSCwastoinvestigatetheeffectoftheplasmapre-treatmentontheT_gandT_m.UsingatensilestrengthtesterYG065HandfollowingastandardprocedurethemaximumforceandelongationatmaximumforceofPETmaterialswasinvestigated.Oxygenandargonplasmapre-treatmentwasfoundtoincreasethePETfabricweightlossrate.ThecolorstrengthofPETfabricswasincreasedbyvariousplasmapre-treatmenttimes.ThepenetrationofplasmaandalkalinereactivespeciesdeepintothePETstructureresultsinbetterdyeabilityandleavesasignificanteffectontheK/Svaluesoftheplasmapre-treatedPET.Itindicatedthatplasmapre-treatmenthasagreatsynergisticeffectwiththealkalinetreatmentofPET.
简介：WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.
简介：
简介：Flexiblethin-filmsupercapacitorswithhighspecificcapacitancearehighlydesirableformodernwearableormicro-sizedelectricalandelectronicapplications.Inthiscontribution,Ni-Cohydroxides(NCH)nanosheetsweredepositedontopofNi-Cualloy(NCA)nanowirearraysformingafreestandingthin-filmcompositeelectrodewithhierarchicalstructureforsupercapacitors.Duringelectrochemicalcycling,thedissolutionofCuintoCuionswillcreatemoreactivesitesonNCA,andtheredepositedcopperoxidecanbecoatedontoNCH,givingrisetosubstantialincreaseinspecificcapacitancewithcycling.Meanwhile,NCAandNCHhaveexcellentconductivity,thusleadingtoexcellentrateperformance.Thisflexiblethin-filmelectrodedeliversanultrahighinitialspecificcapacitanceof0.63F·cm~(-2)(or781.3F·cm~(-3)).Duringcharge-dischargecycles,thespecificcapacitancecanincreaseupto1.18F·cm~(-2)(or1475F·cm~(-3))alongwiththe'self-etching'process.Theelectrodepresentsabetterspecificcapacitanceandratecapabilitycomparedwithpreviouslyreportedflexiblethin-filmelectrode,andthisnoveldesignofetchingtechniquemayexpandtootherbinaryorternarymaterials.
简介：ThesurfaceofacommercialY3Al5O12:Ce3+phosphorwasmodifiedby99%NH4F+CH3COOHsolutioninasupersonicbathwithwatertemperatureof80oCfor4h.Thescanningelectronmicroscopy（SEM）resultsshowedthattheedgeangleswerenotassharpastheunmodifiedparticlesandtheflatsurfacesturnedroughwithmanymicro-structurescovered.Positronlifetimemeasurementsquantitativelyshowedthatsurfacedefectswereremovedawaybymorethan50%.Asaresult,thephotoluminescencedeterminationsshowedthatthebackscatterlosswasreducedby4.2%andtheemissionpowerwasenhancedby5.6%afterthesurfacemodification.Theconversionefficiencywasgreatlyimprovedfrom47.3%to51.1%,aspresentedbythefluorescenceimages.Therefore,itwouldbegreatlyhelpfulfortheimprovementofefficiency,transparencyandstabilityofpc-LED.Moreover,thismethodwassignificantlysuitableformassproductionduetoitseasyoperationandlowcost.
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