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2018年5期
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Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)
Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)
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摘要
未填写
DOI
7dm1m0xrdn/1847530
作者
陶喜霞;莫春兰;刘军林;张建立;王小兰;吴小明;徐龙权;丁杰;王光绪;江风益
机构地区
不详
出处
《中国物理快报:英文版》
2018年5期
关键词
INGAN/GAN
LEDS
超点阵
夹层
Si
工作温度
分类
[理学][物理]
出版日期
2018年05月15日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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来源期刊
中国物理快报:英文版
2018年5期
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相关关键词
INGAN/GAN
LEDS
超点阵
夹层
Si
工作温度
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