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2000年1期
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Lattice strains and composition of self—organized Ge dots grown on Si(001)
Lattice strains and composition of self—organized Ge dots grown on Si(001)
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摘要
未填写
DOI
7dmn8yxo4n/1434530
作者
Z.M.Jiang X.M.Jiang 等
机构地区
不详
出处
《同步辐射装置用户科技论文集》
2000年1期
关键词
硅(001)
自组装
锗斑
X射线衍射
半导体薄膜
表面生长
分类
[核科学技术][核技术及应用]
出版日期
2000年01月11日(中国期刊网平台首次上网日期,不代表论文的发表时间)
相关文献
1
X.Jiang;Z.Jiang;W.Jiang;Q.Jia;W.Zheng;D.Xian;X.Wang.
Study of strain and compostion of the self—organized GE dots by grazing incident X—ray diffraction
.物理,2001-02.
2
蒋最敏;姜晓明;等.
Si(001)衬底自组织生长Ge量子点的组分和应变
.核技术及应用,2000-01.
3
仲坤;肖志松;程国安;程向前;郑瑞廷.
Dependency of photoluminescence from SiO2 thin films containing Si1-xGex quantum dots on Ge/Si doping ratio
.光学工程,2009-09.
4
靳钊;QIAO Liping;LIU Lidong;HE Zhili;GUO Chen;LIU Ce.
Intrinsic Carrier Concentration as a Function of Stress in(001),(101) and(111) BiaxiallyStrained-Si and Strained-Si_(1-x)Ge_x
.材料科学与工程,2015-05.
5
YANG Qiu-Ying;ZHANG Ying-Yue;CHEN Tian-Lun.
Self-organized Criticality in Hierarchical Brain Network
.物理,2008-11.
6
PENGYing-cai;DUHui-jing;等.
Quantum Dot lasers Fabricated by Self—organized Growth
.物理电子学,2000-03.
7
.
Calculation of Ge0.5Si0.5-Si Superlattice Photodetectors on Ge0.05Si0.95 Waveguides:The Optimum Parameters^①
.物理电子学,1997-01.
8
Degang Ma;Lihe Chai.
POWER LAW DISTRIBUTION AND SELF-ORGANIZED CRITICALITY OF DISPERSED PARTICLES
.力学,2005-04.
9
Xu Mao-Jie;Jeyanthinath Mayandi;Wang Xue-Sen;Jia Jin-Feng;Xue Qi-Kun;Dou Xiao-Ming.
STM observation of pit formation and evolution during the epitaxial growth of Si on Si(001) surface
.物理,2010-10.
10
李林;刘国军;李占国;李梅;王晓华.
Extremely low density self-assembled InAs/GaAs quantum dots
.光学工程,2008-06.
来源期刊
同步辐射装置用户科技论文集
2000年1期
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相关关键词
硅(001)
自组装
锗斑
X射线衍射
半导体薄膜
表面生长
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