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Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)
Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)
(整期优先)网络出版时间:2018-05-15
作者:
陶喜霞;莫春兰;刘军林;张建立;王小兰;吴小明;徐龙权;丁杰;王光绪;江风益
理学
>物理
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中国物理快报:英文版
2018年5期
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相关关键词
INGAN/GAN
LEDS
超点阵
夹层
Si
工作温度
Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si(111)
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