Strain Relaxation Related Photoluminescence Bands in Ge／Si Short Period Superlattices-中国期刊网

摘要 Pure-Ge/Sishortperiodsuperlattice(SPS)grownbygassourceMBE(GSMBE)isstudiedbyphotoluminescencespectroscopyandRamanscatteringspectroscopy.AnabnormalbandinphotoluminescenceisfoundinanintermediaterangeofLsibetween1.9nm-2.9nmforsampleswithLgefixedat1.5ml.Incontrasttoapure-Ge/Siquantumwell,theenergyofthebandshowsred-shiftasLsiincreases.RamanscatteringshowsthatSi-SivibrationrelatedRamanshiftreachesaminimumforsampleswithstrongestPLintensityoftheabnormalband.Itisthereforeconcludedthattheabnormalbandisrelatedwithstrainrelaxationprocess.

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Strain Relaxation Related Photoluminescence Bands in Ge／Si Short Period Superlattices

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Strain Relaxation Related Photoluminescence Bands in Ge／Si Short Period Superlattices

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