简介：High-performancethin-filmtransistors(TFTs)withalowthermalbudgetarehighlydesiredforflexibleelectronicapplications.Inthiswork,theTFTswithatomiclayerdepositedZnO-channel/Al_2O_3-dielectricarefabricatedunderthemaximumprocesstemperatureof200℃.First,weinvestigatetheeffectofpost-annealingenvironmentsuchasN_2,H_2-N_2(4%)andO_2onthedeviceperformance,revealingthatO_2annealingcangreatlyenhancethedeviceperformance.Further,wecomparetheinfluencesofannealingtemperatureandtimeonthedeviceperformance.Itisfoundthatlongannealingat200℃isequivalenttoandevenoutperformsshortannealingat300℃.ExcellentelectricalcharacteristicsoftheTFTsaredemonstratedafterO_2annealingat200℃for35min,includingalowoff-currentof2.3×10~(-13)A,asmallsub-thresholdswingof245mV/dec,alargeon/offcurrentratioof7.6×10~8,andahighelectroneffectivemobilityof22.1cm~2/V·s.Undernegativegatebiasstressat—10V,theabovedevicesshowbetterelectricalstabilitiesthanthosepost-annealedat300℃.Thusthefabricatedhigh-performanceZnOTFTwithalowthermalbudgetisverypromisingforflexibleelectronicapplications.

简介：ThinheavilyMg-dopedInGaNandGaNcompoundcontactlayerisusedtoformNi/AuOhmiccontacttop-GaN.ThegrowthconditionsofthecompoundcontactlayeranditseffectontheperformanceofNi/AuOhmiccontacttop-GaNareinvestigated.Itisconfirmedthatthespecificcontactresistivitycanbelowerednearlytwoordersbyoptimizingthegrowthconditionsofcompoundcontactlayer.WhentheflowrateratiobetweenMgandGagassourcesofp++-InGaNlayeris10.6%andthethicknessofp++-InGaNlayeris3nm,thelowestspecificcontactresistivityof3.98×10-5?·cm2isachieved.Inaddition,theexperimentalresultsindicatethatthespecificcontactresistivitycanbefurtherloweredto1.07×10-7?·cm2byoptimizingthealloyingannealingtemperatureto520℃.

简介：Thesuppressionoftherecombinationofelectronsandholes(e–h)andtheenhancementofthelightabsorptionofsemiconductorsaretwokeypointstowardefficientphotocatalyticdegradation.Here,wereportafew-layerg-C3N4/α-MoO3nanoneedles(flg-C3N4/α-MoO3NNs)all-solid-stateZ-schememechanismphotocatalystsynthesizedviaatypicalhydrothermalmethodinacontrolledmanner.Therecombinationofthephoto-inducede–hpairscouldbeeffectivelyrestrainedbytheZ-schemepassagewaybetweentheflg-C3N4andα-MoO3NNsinthecomposite,whichcouldalsopromiseahighredoxabilitytodegradepollutants.Anditbecamepossibleforthepreparedphotocatalysttoabsorblightinawiderangeofwavelengths.Thedetailedmechanismwasstudiedbyelectronspin-resonancespectroscopy(ESR).Thelow-dimensionalnanostructureofthetwoconstituents(α-MoO3NNswithone-dimensionalstructureandflg-C3N4withtwo-dimensionalstructure)endowedthecompositewithvarietiesofexcellentphysicochemicalproperties,whichfacilitatedthetransferanddiffusionofthephotoelectronsandincreasedthespecificsurfaceareaandtheactivesites.The10wt%flg-C3N4/α-MoO3NNsshowedthebestphotocatalyticperformancetowardRhBdegradation,therateofwhichwas71.86%,~2.6timeshigherthanthatofα-MoO3NNs.

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