简介：VO2thinfilmswithgoodswitchingpropertieswerepreparedbycontrollingtheannealingtimeandtheannealingtemperatureinavacuumsystem.Thestructural,opticalandelectricalpropertiesofthesampleswerecharacterizedbyusingXRD、XPS、UV-VISandelectricalmeasurements.TheswitchingparametersofVO2thinfilmwereinvestigatedtoo.TheresultsindicatethatbeforeandafterphasetransitiontheresistanceofVO2thinfilmschangesaboutthreeordersofmagnitude,thevariationoffilmtransmittanceof40%hasbeencarriedoutwiththeabsorptivityswitchingvelocityofabout0.2607/minat900nm.Thestructuralpropertyofsampleshasbeenimprovedbutthephase-transitionpropertieshavebeendecreasedbyincreasingtheannealingtimeandannealingtemperature.ThevalenceofVionsandthestructureofsampleshavegreateffectonphasetransitionpropertiesofVO2thinfilms.Discussionontheeffectsofannealingtimeandannealingtemperatureonthephase-transitiontemperatureandhysteresiswidthshowsthatthebestreasonableannealingtimeandannealingtemperaturecanbeachieved.

简介：Anewvariablestep-sizealgorithmforasecond-orderlatticeformstructureadaptiveinfiniteimpulseresponse(IIR)notchfiltertodetectionandestimationfrequencyofsinusoidsinGaussiannoisesisproposed.Utilizingleastsquarekurtosisofoutputsignalsasacostfunction,thenewgradient-basedalgorithmtoupdatefrequencyoftheadaptiveIIRnotchfilterandthenewvariablestep-sizealgorithmaregiven.ThecomputersimulationresultsshowthattheproposedalgorithmhasbetterabilityinsuppressingcoloredGaussiannoisesandbetteraccuracyinestimatingparametersatlowSNRthanpreviousalgorithms.

简介：Informationhidingschemesbasedonvectorquantization(VQ)usuallyrequirelengthyVQencodinganddecodingprocesses.Inthispaper,weproposeanefficientinformationhidingmethodbasedonclosestpairedtreestructurevectorquantization(CPTSVQ).Thesimulationresultshowsthattheexecutiontimeoftheproposedschemeismuchshorterthanthatattainedbypreviousapproaches.

简介：Anopticalfibermagneticfieldsensorforthedual-parametersimultaneousmeasurementisproposedanddemonstrated.Thesensorheadisconstructedbyapeanut-shapestructureandlongperiodfibergrating(LPFG)coatedbymagneticfluid(MF).Theexternalmagneticfieldintensitycanbemeasuredbythevariationofcharacteristicwavelength(Dip1andDip2)ininterferencespectrumsincetheeffectiverefractiveindexofMFchangeswithexternalmagneticfieldintensity.Whentheexternalmagneticfieldintensitychangesfrom0mTto20mT,themagneticfieldsensitivitiesofDip1andDip2are-0.064nm/mTand-0.041nm/mT,respectively.ExperimentalresultsshowthatthetemperaturesensitivitiesoftheDip1andDip2are0.233nm/℃and0.186nm/°C,respectively.Therefore,thesimultaneousmeasurementofthemagneticfieldintensityandtemperatureisdemonstratedbasedonthesensitivematrix.Ithassomepotentialapplicationsinaerospace,environmentalmonitoringandmedicalsensingfields.

简介：Lightpropagationinnanoparticle-loadedencapsulantsissimulatedbasedonthemethodofMonteCarlo,referringtothemultilayergraded-refractive-indexstructureforLEDencapsulants.Andtheinfluenceofscatteringcoefficientonthetransmittanceisanalyzed.Theresultsshowthatthetransmittancedecreaseswithscatteringcoefficient.Foragivennumberoflayers,theencapsulantswillyieldmaximumtransmittanceiftherefractiveindexvalueofeachlayerisoptimized.Thenanoparticle-loadedencapsulantconsistsofmultiplelayerswithrefractive-indexvaluesthatgraduallydecrease.Thetransmittancewillbehigherthanthatoftraditionalnon-gradedencapsulants,andwillimprovelightextractionefficiencyofLED.

简介：UsingthesimpleinverseFouriertransformation(FT),theindexmodulationstructurewiththesampledperiodforthesampledfiberBragggratingswasdesigned.Inthismethod,theenablechannelsareoperatedatidenticalwavelengthwhiletheunablechannelsarealmostsuppressedcompletely.Theenableandunablechannelscanbeestablishedbasedontheapplications.Thistechniqueisveryusefultodesigntheopticaldevicessuchasopticaladdanddropmultiplexers(OADMs),andinterleaverswithdispersionanddispersionslopecompensation.

简介：Amultilevelgratingcouplerbasedonsilicon-on-insulator(SOI)materialstructureisproposedtorealizethecouplingbetweenwaveguideandwaveguideorwaveguideandfiber.Thiscoupleriscompatiblewiththecurrentfabricationfacilitiesforcomplementarymetaloxidesemiconductor(CMOS)technologywithverticalcoupling.Thisstructurecanrealizecouplingwhenthebeamswithtransverseelectric(TE)polarizationandtransversemagnetic(TM)polarizationareincidentatthesametime.Theinfluencesofthegratingcouplerparametersincludingwavelength,thethicknessofwaveguidelayer,thethicknessofSiO2layerandthenumberofstepsontheTEmodeandTMmodecouplingefficienciesarediscussed.Theoryresearchesandsimulationresultsindicatethatthewavelengthrangeisfrom1533nmto1580nmwhentheTEmodeandTMmodecouplingefficienciesarebothmorethan40%asthegratingperiodis0.99μm.ThecouplingefficienciesoftheincidentTEandTMmodesare49.9%and49.5%atthewavelengthof1565nm,respectively,andthedifferencebetweenthemisonly0.4%.

简介：ThispaperfocusesonanewrectangularwaveguidegratingSlow-WaveStructure(SWS)withcosine-shapedgroovesandstudiesthepropagationcharacteristicsofthewaveintheSWS.Byusingtheapproximatefield-matchingconditions,thedispersionequationandthecouplingimpedanceofthiscircuitareobtained.Thedispersioncurvesandcouplingimpedancesofthefundamentalwavearecalculatedandtheinfluencesofthevariousgeometricaldimensionsarediscussed.Theresultsshowthatthebandwidthofthecosine-shapedgrooveSWSismuchwiderthanthatofrectangular-shapedgrooveone.Andreducingthegroovewidthcanbroadenthefrequency-bandanddecreasethephase-velocity,whileincrementofthegroove-depthcanalsodecreasephase-velocity.Forabovecases,thecouplingimpedanceismorethan16Ω.ThepresentanalysiswillbehelpfulonfurtherstudyanddesignoftheRFsystemsusedinmillimeterwaveTravelingWaveTube(TWT).

简介：Synthesisof9,9-bis(buthoxycarbonylethyl)fluorine(C27H34O4,Mr=422.54)withbutylacrylateasalkylationreagentandfluoreneasstartingmaterialhasbeenperformed.ThecrystalstructurewasmeasuredbyusingtheX-raydiffractionmethod.Thecrystalbelongstomonoclinic,spacegroupP2(1)/cwithparametersas:a=1.2912(1)nm,b=1.0974(1)nm,c=1.7468(1)nm,β=90.252(2),V=2.4752(4)nm3,Z=4,Dcacl=1.134g·cm-3,λ=0.071073nm,μ(MoKα)=0.075mm-1,F(000)=912,R=0.0651andwR=0.1475.X-rayanalysisrevealsthatthethreefusedringsofthefluorenesystemarealmostcoplanarandthetwoestergroupsarenearlyperpendiculartothefused-ringsystem,weakCHOhydrogen-bondingconnectsthemoleculeintocentrosymmetricdimmers

简介：有h<100>的铝氮化物(AlN)电影水晶的取向在希腊语的第二十三个字母(100)上被制作在由搏动的激光免职的房间温度的底层。激光精力密度的效果并且在这些电影的质量上退火被X光衍射学习，Fourier变换红外线的光谱学和扫描电子显微镜学。当有表面上的混杂粒子的增加的数字时，AlN电影的水晶的质量被增加激光精力密度更加改进。在600掳C的退火的处理在这部电影生产一个再结晶过程，由原来的crystallinity，新水晶的取向的外观，和雏晶的增加的改进描绘了。表面在退火期间由于谷物尺寸的增加变得更不平。CLC数字O484.1在资助下面由山东省的自然科学基础支持了没有Y2002A04

简介：Accordingtothedipoletransitionselectionrulesandbychoosingpropertransitionchannels,itisfoundthattheinvertedY-typefour-levelschemecanbeclassifiedintoninedifferent2nd-ordersubschemeswhenusingcorrespondinglaserfields,andtheycanbefurtherclassifiedintoeighty3rd-ordersubschemesindetailaccordingtodifferentexcitingintensitiesthatareappliedindifferentchannels.Inthispaper,thestructuremultiformityofinvertedY-typefour-levelschemeisdiscussedandthedemonstrationsonsomesubschemesarealsogiven.Atthesametime,thesubschemeswhichhavebeenstudiedarepointedout,butmostofthemhavenotbeenresearchedtothebestofourknowledge.

简介：Thereflectivityofone-dimensionalchalcogenidephotoniccrystal(CGPC)structurewiththefirstorderreflectionbandinnearinfrared(NIR)regionistheoreticallystudied.Sb-SeandGe-Schalcogenideglassesareusedashighandlowrefractiveindexlayersrespectively,becausethesematerialshavezeroabsorptioninNIRregion.Thetransfermatrixmethod(TMM)isemployedtocalculatethereflectivespectraoftheproposedstructure.ThetheoreticalresultsofreflectivespectraofbulkchalcogenidematerialswiththecompositionofSb40Se60andGe30S70for4,8,12and15layersandthicknessesof117nmand183nmrespectively,atnormalincidence,arecloseagreementwiththeexperimentalresults.Furthermore,byincreasingthenumberoflayersofSb40Se60andGe30S70,thereflectionbandscanbeenhancedinthewiderrangeoftheNIRregionforthepolarizationatdifferentanglesandthusthebroadbandomnidirectionalreflectorcanbedesigned.

简介：Aneworganicsemiconductortartaricaciddopedsaltofemeraldinepolyaniline(PANI-C4H6O6)hasbeenobtainedbythemethodofoxidativepolymerizationofmonomericanilinewithammoniumpersulfateinacidicsolution.ThestructurewascharacterizedbyFourierTransformInfraredtechnique(FTIR)andX-raydiffraction(XRD).Thetemperaturedependencedcconductivityδdc(T)showsasemiconductorbehaviorandfollowsthequasionedimensionalvariablerangehopping(Q1D-VRH)model.Dataonδdc(T)arealsodiscussed.

简介：Withtheincreaseoftheclockfrequencyandsiliconintegration,powerawarecomputinghasbecomeacriticalconcerninthedesignoftheembeddedprocessorandsystem-on-chip(SoC).Dynamicvoltagescaling(DVS)isaneffectivemethodforlow-powerdesigns.However,traditionalDVSmethodshavetwodeficiencies.First,theyhaveaconservativesafetymarginwhichisnotnecessaryformostofthetime.Second,theyareexclusivelyconcernedwiththecriticalstageandignorethesignificantpotentialfreeslacktimeofthenoncriticalstage.Thesefactorsleadtoalargeamountofpowerwaste.Inthispaper,anovelpipelinestructurewithultra-lowpowerconsumptionisproposed.Itcutsoffthesafetymarginandtakesuseofthenoncriticalstagesatthesametime.Aprototypepipelineisdesignedin0.13mtechnologyandanalyzed.Theresultshowsthatalargeamountofenergycanbesavedbyusingthisstructure.Comparedwiththefixedvoltagecase,50%oftheenergycanbesaved,andwithrespecttothetraditionaladaptivevoltagescalingdesign,37.8%oftheenergycanbesaved.

简介：Foranintegratedelectro-opticalsensor,theoperatingpointhasasignificanteffectontheperformanceofthesensor.Inthispaper,anopticalwaveguideelectricfieldsensorwithcontrollableoperatingpointisdesignedusingLiNbO3materials,whichhasanasymmetricMach-Zehnderinterferometer(MZI)structure.Theoreticalresultsshowthattheoptimaloperatingpointcanbeobtainedandcontrolledbytuningtheoutputwavelengthofthetunablelaserusedinthesensingsystem.Thesimulationresultsshowthatthesensitivityabout83dB·μV/mcanbeobtained,andthelineardynamicrangeaslargeas60dBcanbeachieved.Andthefabricationtoleranceofthecenter-to-centerdistanceforthe3dBcouplerusedintheasymmetricMZIis~0.5μm,whilethepowersplittingratiooftheYbranchiswithmoretolerance.

简介：Aplasmonicrefractiveindexsensorbasedonmetal-insulator-metal(MIM)waveguide-coupledstructureisproposedanddemonstratedinthispaper.Thephysicalmechanismofthedeviceisdeduced,andthefinitedifferencetimedomain(FDTD)methodisemployedtosimulateandstudyitsindexsensingcharacteristics.Bothanalyticandsimulatedresultsshowthattheresonantwavelengthofthesensorhasalinearrelationshipwiththerefractiveindexofmaterialundersensing.Basedontherelationship,therefractiveindexofthematerialcanbeobtainedfromthedetectionoftheresonantwavelength.Theresultsshowthatthesensitivityofthesensorcanexceed1600nm/RIU,anditcanbeusedinchemicalandbiologicaldetections.

简介：Thispaperpresentsanewarraystructureforestimatingtwo-dimensional(2-D)direction-of-arrivals(DOAs).ThestructureiscalledY-shapedarray,whichhas10%betteraccuracypotentialthanthenewly-developedL-shapedarray.Agreatmeritisitsabilitytoestimate2-DDOAswhicheverdirectionsthearrivingsignalscomefrom,comparedwithL-shapedarraywhoseperformancedependsonDOAs.Simulationresultsaregiventodemonstratetheperformanceofthenewarray.

简介：Theproblemofadaptivefuzzycontrolforaclassoflarge-scale,time-delayedsystemswithunknownnonlineardead-zoneisdiscussedhere.Basedontheprincipleofvariablestructurecontrol,adesignschemeofadaptive,decentralized,variablestructurecontrolisproposed.Theapproachremovestheconditionsthatthedead-zoneslopesandboundariesareequalandsymmetric,respectively.Inaddition,itdoesnotrequirethattheassumptionsthatallparametersofthenonlineardead-zonemodelandthelumpeduncertaintyareknownconstants.Theadaptivecompensationtermsoftheapproximationerrorsareadoptedtominimizetheinfluenceofmodelingerrorsandparameterestimationerrors.Bytheoreticalanalysis,theclosed-loopcontrolsystemisprovedtobesemi-globallyuniformlyultimatelybounded,withtrackingerrorsconvergingtozero.Simulationresultsdemonstratetheeffectivenessoftheapproach.

简介：AnewSOI(SiliconOnInsulator)highvoltagedevicewithStepUnmovableSurfaceCharges(SUSC)ofburiedoxidelayeranditsanalyticalbreakdownmodelareproposedinthepaper.Theunmovablechargesareimplementedintotheuppersurfaceofburiedoxidelayertoincreasetheverticalelectricfieldanduniformthelateralone.The2-DPoisson'sequationissolvedtodemonstratethemodulationeffectoftheimmobileinterfacechargesandanalyzetheelectricfieldandbreakdownvoltagewiththevariousgeometricparametersandstepnumbers.AnewRESURF(REduceSURfaceField)conditionoftheSOIdeviceconsideringtheinterfacechargesandburiedoxideisderivedtomaximizebreakdownvoltage.Theanalyticalresultsareingoodagreementwiththenumericalanalysisobtainedbythe2-DsemiconductordevicessimulatorMEDICI.Asaresult,an1200Vbreakdownvoltageisfirstlyobtainedin3μm-thicktopSilayer,2μm-thickburiedoxidelayerand70μum-lengthdriftregionusingalineardopingprofileofunmovableburiedoxidecharges.