VO2thinfilmswithgoodswitchingpropertieswerepreparedbycontrollingtheannealingtimeandtheannealingtemperatureinavacuumsystem.Thestructural,opticalandelectricalpropertiesofthesampleswerecharacterizedbyusingXRD、XPS、UV-VISandelectricalmeasurements.TheswitchingparametersofVO2thinfilmwereinvestigatedtoo.TheresultsindicatethatbeforeandafterphasetransitiontheresistanceofVO2thinfilmschangesaboutthreeordersofmagnitude,thevariationoffilmtransmittanceof40%hasbeencarriedoutwiththeabsorptivityswitchingvelocityofabout0.2607/minat900nm.Thestructuralpropertyofsampleshasbeenimprovedbutthephase-transitionpropertieshavebeendecreasedbyincreasingtheannealingtimeandannealingtemperature.ThevalenceofVionsandthestructureofsampleshavegreateffectonphasetransitionpropertiesofVO2thinfilms.Discussionontheeffectsofannealingtimeandannealingtemperatureonthephase-transitiontemperatureandhysteresiswidthshowsthatthebestreasonableannealingtimeandannealingtemperaturecanbeachieved.
