简介：ＣａｌｃｕｌａｔｉｏｎｏｆＢｕｌｋＭｏｄｕｌｉｏｆＣａｒｂｏｎＮｉｔｒｉｄｅ／ｍｅｔａｌＮｉｔｒｉｄｅＣｏｍｐｏｓｉｔｅｓＨｏｕＱｉｎｇｒｕｎａｎｄＧａｏＪｕ（侯清润）（高炬）ＤｅｐａｒｔｍｅｎｔｏｆＰｈｙｓｉｃｓ，ＴｈｅＵｎｉｖｅｒｓｉｔｙｏｆＨｏ...

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简介：做Eu2+的第三的氮化物黄磷，Sr2Si5N8:Eu2+，用高温度被综合固态方法。X光检查衍射(XRD)模式证明那个Sr2Si5N8单个阶段被获得。因为Eu2+的半径比Sr2+的小，格子参数缩小了。排放系列给一个宽广排放乐队看了。随Eu2+集中的增加，排放山峰位置是redshifted。刺激系列给从主人和Eu2+离子的4f74f65d1转变发源的二个刺激乐队看了。与Sr2Si5N8的光特征相比:Eu2+和CaS:Eu2+黄磷在不同温度，二黄磷的紧张随温度的增加逐渐地减少了，这被注意。Sr2Si5N8的紧张:Eu2+黄磷比CaS的强壮:Eu2+，它显示前者的光特征比后者的好。

简介：Anewcatalyticchemicalvaporprocessfordepositingsiliconnitridefilmsusingsilanehydrazinegaseousmixtureisdescribed.Thissystemcanbeusefulatatemperatureoflowerthan400℃.Thecatalyticprocessgivesmorerapiddepositionratethan10nm/min.Theatomiccompositionration.N/Si,whichisevaluatedbyRutherfoldbackatteringmethodisabout1.4underagivenexperimentalconditionsmorethanthestoiciometricvalueof1.33inSi3N4.Theinfraredtransmissionspectrashowalargedipat850cm^-1duetoSi-NbondsandnocleardipduetoSi-Obonds.HighN-HbonddensityistheevidencethatthedepositionmechanismislimitedbyN-Nbondbreakingofthehydrazine.TheHcontents,evaluatedfromSi-HandN-Hbondsintheinfraredabsorptionspectra,andthedepositionratearemeasuredasafunctionofthesubstratetemperature.Inadditionsomefilmpropertiessuchasthereistivityandthebreakdownelectricfieldarepresented.

简介：Thedynamicbehavioroftwo-dimensionalnanostructuresisimportanttothefutureapplicationofnanodevices.Thevibrationalbehaviorsofsingle-layeredhexagonalboronnitride(h-BN)arestudiedbymoleculardynamicssimulationandcontinuumplatemodel.ThebendingstiffnessandPoisson'sratiosofh-BNalongzigzagdirectionandarmchairdirectionarecalculated.H-BNissoftercomparedwithgraphene.Thecontinuumplatemodelcanpredictthevibrationofh-BNwithfouredge-clampedboundaryconditionswell.Theelectricfieldsindifferentdirectionshaveobviousinfluenceonthevibrationofh-BN.Thenaturalfrequencyofh-BNchangeslinearlywiththeelectricfieldintensityalongthepolarizationdirection.Thenaturalfrequencyofh-BNdecreaseswiththeincreaseofelectricfieldintensityalongbothpositiveandnegativenonpolarizationdirection.Whilethenaturalfrequencyofh-BNincreaseswiththeincreaseofelectricfieldintensityalongbothpositiveandnegativetransverseelectricfield.

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简介：Thereductionofcarbon/aluminapowdermixtureinaflowingnitrogenstreamwasinve-tigatedbythequantitiativeanalysisofX-raydiffraction.Experimentalresultsindicatedthatthereactionratecouldbeincreasedbyincreasingthenitrogenflowrate,ortreatingtemperature,Theratewasalsofoundtobeincreasedbydecreasingthealuminaparticlesizeandinitialbulkdensity,Andthecalcinedaluminawassup-posedtobethesuitablesourceofaluminumox-idecomparedwiththeothertypesofalumina.ThefinalpowderproductofAlNwasobservedbySEMandanalyzedbyaprticle-sizeanalyzer.

简介：为高周波的表面的硼氮化物(BN)电影声学的波浪(锯)设备被无线电在Ti/Al/Si(111)晶片上扔频率(RF)磁控管劈啪作响。BN电影的结构被Fourier变换调查红外线(FTIR)光谱学和X光检查衍射(XRD)系列，和表面形态学和BN电影的压电的性质被原子力量显微镜学(AFM)描绘。结果证明当氮和氩的流动比率是2:18时，立方的BN(c-BN)电影与高纯净和c轴取向被扔，并且当氮和氩的流动比率是4:20时，六角形的BN(h-BN)电影与高c轴取向被扔。粒子一致、紧缩，并且粗糙分别地是1.5nm和2.29nm。h-BN电影比c-BN电影有更好压电的反应和分发。

简介：Macroporoussiliconnitride(Si3N4)ceramicswithhighstrength,uniformstructureandrelativelyhighporositywereobtainedbygelcastingandcarbonthermalreactioninatwo-stepsinteringtechnique.Microstructureandcompositionwereinvestigatedbyscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM),X-raydiffraction(XRD).Openporosity,poresizedistributionandbasicmechanicalperformanceweremeasuredbyArchimedesmethod,mercuryintrusionporosimetryandthree-pointbendingmethods,respectively.SEMandTEMresultsrevealedthatporeswereformedbyelongatedβ-Si3N4.SADPmeasurementprovedtheformationofSiCparticles.TheSiCgranuleswerebeneficialfortheformationofhighratioelongatedβ-Si3N4,andatproperamount,theyalsoactedasreinforcementphase.Thermodynamicanalysisindicatedthatthemechanismsofthereactionsweremainlyassociatedwithliquid-solidreactionandgas-liquidreaction.

简介：HightemperatureoxidationbehavioroftwokindsofnitridebondedSiCbasedrefractorieswasinvestigatedat11001500℃bymeansofX-raydiffractometer,scanningelectronicmicroscopyandthermogravimetry.Theresultsshowthat:(1)withthetemperatureincreasing,theoxidationmassincrementrateofthespecimenincreasesfirstandthendecreases,andoxidationpassivationoccurs;(2)theoxidationresistanceofSiAlONbondedSiCrefractoriesissuperiortothatofSi3N4bondedSiCrefractories;(3)hightemperatureoxidationresultsintheincreaseofcompressivestrengthatroomtemperatureofSiCbasedrefractoriescomparedwithspecimenbeforeoxidation;thecompressivestrengthofSiAlONbondedSiCspecimensoxidizedathightemperaturesdecreaseswiththeincreaseofthetemperatureasaresultofformationandburstofsurfacebubble,whilethedecreaseofcompressivestrengthofSi3N4bondedSiCspecimensoxidizedathightemperaturesisowingtotheincreaseoftheconsistencyofnet-likecrackassociatedwithcristobalitetransformationduringcooling.

简介：Thereisarapidlygrowingdemandtousesiliconandsiliconnitride（Si3N4）integratedphotonicsforsensingapplications,rangingfromrefractiveindextospectroscopicsensing.BymakinguseofadvancedCMOStechnology,complexminiaturizedcircuitscanbeeasilyrealizedonalargescaleandatalowcostcoveringvisibletomid-IRwavelengths.InthispaperwepresentourrecentworkonthedevelopmentofsiliconandSi3N4-basedphotonicintegratedcircuitsforvariousspectroscopicsensingapplications.Wereportourfindingsonwaveguide-basedabsorption,andRamanandsurfaceenhancedRamanspectroscopy.Finallywereporton-chipspectrometersandon-chipbroadbandlightsourcescoveringverynear-IRtomid-IRwavelengthstorealizefullyintegratedspectroscopicsystemsonachip.

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简介：Titaniumnitride(TiN)asarefractoryplasmonicmaterialisproposedtobeusedasanangle-insensitiveintegratedbroadbandsolarabsorberandnarrowbandnear-infrared(NIR)emitterforsolarthermo-photovoltaic(STPV)application.ByconstructingTiN-nanopatterns/dielectric/TiNstackmetamaterial,approximately93%lightabsorptioninawavelengthrangeof0.3–0.9μmandnearunitnarrowband(Δλ∕λ～0.3)emissioninNIR(～2μm)weredemonstratedbynumericalsimulation.Keepingtheexcellentlightabsorptioninthevisibleband,theemissionwavelengthcanbeeasilytunedbypatterningthetopTiNlayerintovarioussubwavelengthstructures.ThisdualfunctionattributestotheintrinsicabsorptionandplasmonicpropertyofTiN.Insuchanintegratedstructure,broadbandabsorptionandnarrowbandemissionneedtobebalancedforanoptimizedpowerefficiencyconversion.DetailedanalysishasdemonstratedthattheSTPVsystembasedonthisintegratedabsorber/emittercanexceedtheShockley–Queisserlimitat1000K.

简介：一种熄灭水的技术被采用了评估多孔的Si3在空气气氛的N4陶艺。高孔的Si3因为它毛孔的角色，到热吃惊的更高的力量保留和一个更好的电阻作为裂缝arresters使疲劳的N4陶艺展览。然而，稠密、协调的表面氧化物层在热疲劳期间在剩余力量导致一个重要好处尽管更厚的氧化物层介绍，到第30周期的一个增加的疲劳数字不能引起进一步的影响，它被归因于洞缺点和部分intergranular的消失阶段。

简介：Vanadiumnitridewassynthesizedbyone-stepmethodusingV2O5andcarbonblackasrawmaterialsinnitrogenatmosphere.ThephasesofdifferentreactionproductspreparedindifferentreactiontemperatureswereanalyzedbyX-raydiffraction(XRD),andthedynamicbehavioroftheprocessofsynthesizingvanadiumnitride(VN)byone-stepmethodwasstudiedwithnon-isothermalthermogravimetry.Themechanismfunctionandkineticparametersofreactionprocesswerecalculatedbythermalgravimetricanalyses(TGA),andthereactionrateequationwasestablished.TheXRDresultsshowthatforthesamplestestedwithminimalVNafterholdingfor4hat1273K,themainphaseofproductsisVNat1476K,whilesomevanadiumnitridestransformintovanadiumcarbidesagainover1573K.ItisfoundthatN2isbeneficialtostimulatereductionandproceedcarbonizationreaction,andthereductionandnitridationreactioncanoccursimultaneously.TheactivationenergyofpreparingVNbyone-stepmethodis104.005kJ·mol-1,andthefrequencyfactoris470.52at1280–1358K,and150.052kJ·mol-1and2.359104at1358–1426K,respectively.

简介：轧了nanorods用诱导地联合的血浆与Ninano岛面具蚀刻被制作。poly[2-methoxy-5-(2乙醇)hexoxy-1,4-phenylenevinylene](MEH-PPV)/GaN-nanorod混血儿结构被扔MEH-PPV电影在上制作由使用纺纱涂层过程轧了nanorods。在混合结构，空间分离被最小化完成高效率的非放射的反响的精力转移。由MEH-PPV/GaN-nanorod混合结构组成的一台新奇设备的光性质被分析光致发光(PL)学习系列。与相比纯轧了nanorods，乐队边排放的PL紧张在MEH-PPV/GaN-nanorods轧了像黄乐队的三次，和紧张稍微被压制一样，被提高。获得的结果被精力转移在之间分析轧了nanorods和MEH-PPV。一个精力转移模型被建议解释现象。

简介：Wepresentnumericalcalculationoftheimpactofelectron-electroninteractiononthebehaviorofdensityofstatesandopticalpropertiesofBeO,SiCandBoron-Nitridenanotubesandsheets.Hubbardmodelhamiltonianisappliedtodescribethedynamicsofelectronsonthelatticestructureofthesescompounds.TheexcitationspectrumofthesysteminthepresenceoflocalelectronicinteractionshasbeenfoundusingmeanSeldapproach.WefindthebandgapwidthinbothopticalabsorptionanddensityofstatesreduceswithlocalHubbardelectronicinteractionparameter.Theabsorptionspectraexhibitstheremarkablepeaks,mainlyowingtothedivergencebehaviorofdensityofstatesandexcitoniceffects.AlsowecompareopticalabsorptionfrequencybehaviorofBeO,SiCandBoron-Nitridenanotubeswitheachother.FurthermoreweinvestigatetheopticalpropertiesofBeOandSiCsheets.Anovelfeatureofopticalconductivityofthesestructuresisthedecreaseoffrequencygapintheopticalspectrumduetoelectronicinteraction.

简介：有为由感应的加热的一个垂直metalorganic化学药品蒸汽免职反应堆的一条戒指隧道的susceptor结构被建议。因此，热传导的方向由隧道被改变，并且隧道在susceptor做热再分配。在这susceptor的热转移的模式也被分析。另外，在susceptor的隧道的地点和尺寸用有限元素方法被优化。比较在之间优化并且常规susceptor表演优化susceptor不仅在晶片提高加热效率而且温度分发的一致性，它贡献改进电影生长的质量。[从作者抽象]

简介：ThepreparationofcrystallineC_3N_4filmswasinvestigatedusingpulsedarcdischargefrommixedmethanolandammoniawateratatmosphericpressure.TheX-raydiffraction(XRD)patternsofthefilmspreparedatasubstratetemperatureof450℃suggestedthatthefilmwascomposedofα-C_3N_4andβ-C_3N_4crystallites.RamanspectraexhibiteddistinctpeakswhichareingoodagreementwiththosepredictedtheoreticallyforC_3N_4crystallites.

简介：Siliconnitridenanoparticlesweresynthesizedbyradio-frequency(RF)plasmachemicalvapordeposition(PCVD)usingsilicontetrachlorideandammoniaasprecursors,andargonascarriergas.Byassumingchemicalthermodynamicequilibriuminthesystem,acomputerprogrambasedonchemicalthermodynamicswasusedtocalculatethecompositionsofthesystematdifferentinitialconcentrationsandfinaltemperatures.Atfirst,fiveelementsandthirty-fourspecieswereconsidered.Theeffectsoftemperatures,andconcentrationsofammonia,hydrogenandnitrogenontheequilibriumcompositionswereanalyzed.Itwasfoundthattheoptimalreactiontemperaturerangeshouldbe1200to1500KtoobtainthehighestconversionandyieldofSi3N4.Theinletpositionofammoniashouldbelowerthanthatofsilicontetrachloride,andbothshouldbelocatedatthetailoftheplasmatorch.Thebestmoleratioofammoniatosilicontetrachloridewasfoundtobeabout6.Later,theinfluencesofwater(andoxygen)wereconsidered,and17additionalspecieswereincludedinthecomputations.ItwasfoundthatoxygenorwatercontentintherawmaterialsshouldbeaslowaspossibleinordertohavehighnitridecontentintheproducedSi3N4.Nitrogenorhydrogenmightbeusedtoreplacesomeorevenalltheargontoimprovetheyieldofsiliconnitrideandreducethecost.Theratioofammoniatosilicontetrachlorideshouldbehighenoughtoobtainhighconversion,butnotexcessivelyhightoreducetheoxygencontentduetotheexistenceofwaterinammonia.Thesimulatedresultswereverifiedbyexperiments.