简介:WehavemeasuredthedeepenergyleveloftheInP:Fewhichissemi-insulatorthroughthemethodofOTCS.TheeffectoflightintensityonOTCSmeasurementismainlydiscussed.ThereareelectrontrapofET=0.034eVandholetrapofET=1.13eVinInP:Feunderthestronglightandlowtemperature.ThelocationoftheOTCSpeakofelectrontrap(ET=0.34eV)movestowardsthedirectionofhightemperaturer,whenthelightintensitywasincreased,ETisdifferentunderdifferentlightintensity.Itiscorrectedintermsoftheorythatthestuffratioofthedeepenergylevelisaffectedbythelightintensity.Theexperimentsshowthattheerrorisdecreasedgreatlywiththecorrection.
简介:Usinganewlow-temperatureprocess(<600℃),thepoly-SiTFTwasfabricatedbymetal-inducedlateralcrystallization(MILC).Anultrathinaluminumlayerwasdepositedona-Sifilmandselectivelyformedbyphotolithography.Thefilmswerethenannealedat560℃toobtainlaterallycrystallizedpoly-Sifilm,whichisusedasthechannelareaofaTFT.Thepoly-SiTFTshowedanon/offcurrentratioofhigherthan1×106atadrainvoltageof5V.TheelectricalpropertiesaremuchbetterthanTFTfabricatedbyconventionalcrystallizationat600℃.
简介:做Fe的ZnO(Zn0.99Fe0.01O)粉末被球milling成功地与不同milling时间准备,并且用X光检查衍射(XRD)被调查,扫描电子显微镜(SEM),紫外可见(紫外力)光谱学,颤动的样品磁强计(VSM)和电子顺磁的回声(EPR)光谱学。用XRD的结构的分析表明在时间能在wurtzite,并且在XRD使结晶的不同milling的做Fe的ZnOmilled组织模式,与有XRD仪器的敏感的Fe簇有关的第二等的阶段不能被发现。为24h的样品milled的SEM图象显示出球形的nanoparticles的存在。从光分析,光乐队差距被发现与增加milling时间减少,它显示Fe2+离子的加入进ZnO格子。用VSM的磁化测量表明nanoparticles在房间温度展出铁磁性的行为,并且磁化与增加milling时间逐渐地增加。结论被nanoparticles的顺磁的回声在房间温度检验了的电子进一步证实,它显示出与Fe离子有关的一个强烈、宽广的铁磁性的回声信号。
简介:ThestainlessFe-Mn-Sishapememoryalloy(SMA)coatingwaspreparedonthesurfaceofAISI304stainlesssteel.Theprincipalresidualstressmeasuredbythemechanicalhole-drillingmethodindicatesthattheFe-Mn-SiSMAcladdingspecimenpossessesalowerresidualstresscomparedwiththe304stainlesssteelcladdingspecimen.Themeanstressvaluesoftheformerandthelatteron10-mm-thicksubstrateare4.751MPaand7.399MPa,respectively.What’smore,theirdeformationvalueson2-mm-thicksubstrateareabout0°and15°,respectively.Meanwhile,thevariationtrendandthevalueoftheresidualstresssimulatedbytheANSYSfiniteelementsoftwareconsistwithexperimentalresults.TheX-raydiffraction(XRD)patternshowsε-martensiteexistsinFe-Mn-SiSMAcoating,whichverifiesthemechanismoflowresidualstress.That’stheγ→εmartensitephasetransformation,whichrelaxestheresidualstressofthespecimenandreducesitsdeformationinthelasercladdingprocessing.
简介:UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.
简介:镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射,X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了,nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则,与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。