简介：首次提出在Ni中掺入夹层W的方法来提高NiSi的热稳定性。具有此结构的薄膜,经600-800℃快速热退火后,薄层电阻保持较低值,小于2Ω/。经Raman光谱分析表明,薄膜中只存在NiSi相,而没有NiSi2生成。Ni（W）Si的薄层电阻由低阻转变为高阻的温度在800℃以上,比没有掺W的镍硅化物转变温度的上限提高了100℃。Ni（W）Si/Si肖特基势垒二极管能够经受650-800℃不同温度的快速热退火,肖特基接触特性良好,肖特基势垒高度为0.65eV,理想因子接近于1。

简介：AwedgeshapeSiLEDisdesignedandfabricatedwith0.35μmdouble-gratingstandardCMOStechnology.ThedevicestructureisbasedontheN-well-P+junction.TheP+hasawedgeshapeandissurroundedbytheN-well.ThemicrographsofSiLEDs'emittingandlayoutarecaptured.TheI-VcharacteristicandspectraoftheSiLEDaretested.Underroomtemperatureandbackwardbias,itsradiantluminosityis12nWat100mA,andthewavelengthoftheemittingpeakislocatedat764nm.

简介：Cupricoxide(CuO)isconsideredtobeapromisingmaterialforphotovoltaicapplications.Inthispaper,p-CuO/n-Sijunctionsolarcellswereobtainedbythermaloxidationofmetalliccopperfilmsdepositedonn-Sisubstratesat400℃for5h.X-raydiffractionpatternsshowthattheas-preparedfilmsareCuOwithmonocliniccrystallinestructure.HalleffectmeasurementresultsshowthatCuOfilmsarep-typeconduction.Adirectband-gapof~1.57eVfortheCuOfilmisdeducedfromUV-VisAbsorbancespectra.SolarcellsofCu/p-CuO/n-Si/AlstructureshowthatitsphotovoltaicbehaviorhasamuchwiderspectrumresponsewidthcomparedwiththatofSisolarcells.Inaddition,thephotocurrentofCuO/n-SijunctionisinvestigatedasafunctionofCuOfilmthickness,anditisfoundthatthecriticalthicknessforCuOonSiisabout250nm.

简介：华硕系列笔记本中有12.1寸的轻薄型机器S5N、M5N，有15寸宽屏幕的M6N，在迷你领域有10寸屏幕的S200N，那么既兼顾移动性，又兼顾性能的14寸屏幕领域呢？对了，就是这款M3N了。

简介：UsingdoublecrystalX-raysdiffraction(DCXRD)andatomicforcemicroscopy(AFM),theresultsofGexSi1-xgrownUHV/CVDfromSi2H6andSiH4areanalyzedandcompared.Adsorbatescanmigratetotheenergy-favoringpositionduetotheslowgrowthratefromSiH4.Inthiscase,aSibufferthatisolatestheeffectofsubstrateonepilayercouldnotbegrown,whichresultsinapitpenetratingintoepilayerandbuffer.TheFWHMis0.055°inDCXRDfromSiH4.Thepresenceofdiffractionfringesisanindicationofanexcellentcrystallinequality,TheroughnessofthesurfaceisimprovedifgrownbySi2H6:however,thecrystalqualityoftheGex2Si1-xmaterialbecameworsethanthatfromSiH4duetomuchlargergrowthratefromSi2H6.ThecontentofGeisobtainedfromDCXRD,whichindicatesthegrowthratefromSi2H6islargest,thenGeH4andthatfromSiH4isleast.

简介：Afast-speedpulsedetectorbasedonn-typeSi-Schottkydiodemountedinthewaveguideisinvestigated.Therelationofthefast-speedpulsedetectorbetweenresponsetimeand3dBbandwidthisanalyzed.Byadoptingthetunablecircuit,thematchedbandwidthisachievedaswideaspossible.Experimentalresultsshowthatthepulseresponsetimeofthedetectorislessthan150pswithinrandomcarriersignal500MHzbandwidthrangebetween35GHzto39GHzviatuningcircuit.Thedetectorisveryeasytooperatebecauseitdoesnotneedbiascurrentorsynch-pulsesource.

简介：在这项工作中，和两个新的荧光粉发光特性的合成：Pr3＋CaYAlO4（CYA）和镨铽：CyA的发光二极管（LED）的影响。0.5%（原子百分比）Pr3＋：环孢素A具有最大的亮黄色发射不同Pr3＋浓度，根据3P0＋3H4→1G4＋1G4的交叉弛豫过程。Pr3＋的能级图：环孢素A，特别是D级和4F51S0能级位置，讨论了。通过掺杂Tb3＋离子，镨铽荧光粉的色坐标：CyA可调谐从黄色到白色区域。最后，用最强的发光色坐标（0.339，0.364）位于白色区可在0.3%Tb3＋/0.5%Pr3＋：CyA磷。

简介：王博士“电子组装工艺缺陷的分析诊断与解决”一、前言：目前中国已经成为全球电子制造业的中心，随着电子产品的高密化、环保化、低利润化、高质量要求，电子制造企业的生存越来越艰难，只有在保证产品功能的情况下提高产品质量、降低产品成本，才能在竞争激烈的市场中争得一席之地。

简介：Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.

简介：TheinvestigationonopticalpropertiesofSi1-xGex/Sistrainedlayerstructureshasbeencarriedoutactivelyinrecentyears.Thephotoluminescencehasbe-comeabriskersubjectinthestudiesofitsvariousopticalproperties.Aresearchdevelop-menttophotoluminescencepropertiesofsomenewSi1-xGex/Sistrainedlayerstruc-turesisintroduced.

简介：Theoptimumparametersarecalculatedbythelargecross-sectiontheoryandmodecut-offequation.Theeffectonreversebiasvoltagesinanalysedbythedopingconcentrationinn^+-Si.Theissignificantbecausethereversebiasincreasessharplywhenthedopedconcentrationinn^+-Siislessthan1×10^20cm^-3.

简介：Theresidualelectricallyactivedefectsin(4×1012cm-2（30KeV）+5×1012cm-2（130KeV）)si-implantedLECundopedsi-GaAsactivatedbytwo-steprapidthermalannealing（RTA）LABELEDAS970℃（9S）+750℃（12S）havebeeninvestigatedwithdeepleveltransientspec-troscopy（DLTS）.TwoelectrontrapsET1(Ec-0.53eV,σn=2.3×10-16cm2)andET2（Ec-0.81eV,σn=9.7×10（-13）cm2）aredetected.Furthermore,thenoticeablevariationsoftrap’scon-centrationandenergylevelintheforbiddengapwiththedepthprofileofdefectsinducedbyionim-plantationandRTAprocesshavealsobeenobserved.The[Asi·VAs·AsGa]and[VAs·Asi·VGa·AsGa]areproposedtobethepossibleatomicconfigurationsofET1andET2,respectivelytoexplaintheirRTAbehaviors.

简介：镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射，X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了，nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则，与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。

简介：Organicmultiplequantumwells(OMQWs)consistingofalternatinglayersoforganicmaterialshavebeenfabricatedfromtris(8-hdroxyquinoline)aluminum(Alq)and2-(4-biphenylyl)-5-(4-tertbutylphenyl)-1,3,3-oxadiazole(PBD)byamultisource-typehigh-vacuumorganicmoleculardeposition.Fromthesmall-angleX-raydiffractionpatternsofAlq/PBDOMQWs,aperiodicallylayeredstructureisconfirmedthroughtheentirestack.TheAlqlayerthicknessintheOMQWswasvariedfrom1nmto4nm.Fromtheopticalaborption,photoluminescenceandelectroluminescencemeasurements,itisfoundthattheexcitonenergyshiftstohigherenergywithdecreasingAlqlayerthickness,ThechangesoftheexcitonenergycouldbeinterpretedastheconfinementeffectsofexcitonintheAlqthinlayers.Narrowingoftheemissionspectrumhasalsobeenobservedfortheelectroluminescentdevices(ELDs)withtheOMQWsstructureatroomtemperature.

简介：ＰｈｏｔｏｃｏｎｄｕｃｔｉｖｉｔｙＣｈａｒａｃｔｅｒｉｓｔｉｃｓｏｆＰｏｒｏｕｓＳｉ①ＣＨＡＯＺｈａｎｙｕｎ，ＷＡＮＧＫａｉｙｕａｎ（ＤｅｐａｒｔｍｅｎｔｏｆＥｌｅｃｔｒｏｎｉｃＥｎｇｉｎｅｒｉｎｇ，ＳｏｕｔｈｅａｓｔＵｎｉｖｅｒｓｉｔｙ，Ｎａｎｊｉ...

简介：随着4G牌照发放的临近,4G已成为当下业内的热点。不可否认4G是未来网络的发展趋势,但对于中国运营商而言,3G才是现金牛,所以充分发挥3G的潜力,不仅关系着运营商的当下,也决定着4G的未来。

简介：Lanthanidehasattractedmuchattentioninthefieldofopticalcommunicationsinrecentyears.SomepropertyanalysesonopticalwaveguideofNd-dopedcrystalNdxY1-xAl3(BO3)4andNd:MgO:LiNbO3aremadeinthispaper,followedbyintroductionofthemethodsofexperimentationandtheoreticalcalculationfortheplanaropticalwaveguides.Therefractiveindexprofilesoftheopticalwaveguidesareanalyzed.Theaboveworkoffersusefulinformationforstudyonnewtypematerialsforopticalcommunications.

简介：2008年ITU将开始进行4G标准的制定工作，ITU将开始向全世界征求4G候选技术。对4G的管制和研究已经成为全球范围的焦点，越来越多的人才和资金正在流入到该领域，4G技术的框架越来越清晰。从20世纪未4G概念的提出，到技术标准制动工作的启动。全球4G的发展已经走到了哪一步？本期特别策划围绕技术，频谱，标准，国际合作，未来应用等各方面，提示国际及国内4G研发的进程和关键问题。特别感谢未来移动通信论坛对本期专题的大力支持！

简介：Aconductionchannelmodelispropsedtoexplainthehighconductivitypropertyofnc-Si:H.Detailedenergybanddiagramisdevelopedbasedontheanalysisandcalculation,andtheconductivityofthenc-Si:Hwasthenanalysedonthebasisofenergybandtheory.Itisassumedthattheconductivityofthenc-Si:Hstemsfromtwoparts:theconductanceoftheinterface,wherethetransportmechanismisidentifiedasathermal-assistedtunnelingprocess,andtheconductancealongthechannelaroundthegrain,whichmainlydeterminedthehighconductivityofthenc-Si:H.Theconductivityofnc-Si:Hiscalculatedandcomparedwiththeexperimentdata.Thetheoryisinagreementwiththeexperiment.

简介：在大约431nm的蓝光在C+培植以后从取向附生的硅被获得，在顺序蚀刻的氢环境和化学药品退火。随化学蚀刻的增加，蓝山峰起初被一座红山峰最后提高，然后减少了并且代替。C=O混合物在C+培植期间被介绍并且在纳米Si的表面嵌入在退火期间形成了，并且最后被形成纳米硅与嵌入结构，它贡献蓝排放。介绍是光致发光的可能的机制。