Theimplantedionrange,thedepthprofileandthefilmsttuctureoftheimplantedlayerwerestudied;thecarrierconcentrationandthemobilityweremeasured;theconductivitymechanismofthefilmimplantedFeintoAl2O3ceramicwasdiscussed.TheconclusionisthattheimplantedFe2+ionsmoveintoAl2O3latticeandreplaceAl3+toformsubs-titutionimpuritiessothattheionimplantedlat-tice,ascomparedwiththeoriginalone,presentsaneffectivenegativechargewhichformsanegativechargecenter.Avacancyisboundarroundit,andanacceptorisintroducedintheforbiddenband.