摘要
Theimplantedionrange,thedepthprofileandthefilmsttuctureoftheimplantedlayerwerestudied;thecarrierconcentrationandthemobilityweremeasured;theconductivitymechanismofthefilmimplantedFeintoAl2O3ceramicwasdiscussed.TheconclusionisthattheimplantedFe2+ionsmoveintoAl2O3latticeandreplaceAl3+toformsubs-titutionimpuritiessothattheionimplantedlat-tice,ascomparedwiththeoriginalone,presentsaneffectivenegativechargewhichformsanegativechargecenter.Avacancyisboundarroundit,andanacceptorisintroducedintheforbiddenband.
出版日期
1991年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)