Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c

摘要 WereportonN-dopedp-typeZnOfilmswiththec-axisparalleltothesubstrate.ZnOfilmswerepreparedonana-Al2O3(0001)substratebysolid-sourcechemicalvapourdeposition(CVD),Zn(CH3COO)2.2H2OwasusedastheprecursorandCH3COONH4asthenitrogensource.Thegrowthtemperaturewasvariedfrom300℃to600℃,theas-grownZnOfilmdepositedat500℃showedp-typeconductionwithitsresistivityof42Ωcm,carrierdensity3.7×10^17cm^-3andHallmobility1.26cm^2V^-1.s^-1atroomtemperature,whicharethebestpropertiesforp-typeZnOdepositedbyCVD.Thep-typeZnOfilmpossessesatransmittanceofabout85%inthevisibleregionandabandgapof3.21eVatroomtemperature.

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Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c—Axis Parallel to the Substrate

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Preparation and Properties of N—Doped p—Type ZnO Films by Solid—Source Chemical Vapour Deposition with the c—Axis Parallel to the Substrate

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