Properties of multilayer gallium and aluminum doped ZnO（GZO/AZO） transparent thin films deposited by pulsed laser deposition process-中国期刊网

摘要 MultilayergalliumandaluminumdopedZnO(GZO/AZO)filmswerefabricatedbyalternativedepositionofGa-dopedzincoxide(GZO)andAl-dopedzincoxide(AZO)thinfilmbyusingpulsedlaserdeposition(PLD)process.TheelectricalandopticalpropertiesoftheseGZO/AZOthinfilmswereinvestigatedandcomparedwiththoseofGZOandAZOthinfilms.TheGZO/AZO(1:1)thinfilmdepositedat400°Cshowstheelectricalresistivityof4.18×10-4Ω·cm,anelectronconcentrationof7.5×1020/cm3,andcarriermobilityof25.4cm2/(V·s).TheopticaltransmittancesofGZO/AZOthinfilmsareover85%.TheopticalbandgapenergyofGZO/AZOthinfilmslinearlydecreaseswithincreasingtheAlratio.

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Properties of multilayer gallium and aluminum doped ZnO（GZO/AZO） transparent thin films deposited by pulsed laser deposition process

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Properties of multilayer gallium and aluminum doped ZnO（GZO/AZO） transparent thin films deposited by pulsed laser deposition process

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