简介：Moleculardynamics(MD)simulationswereperformedtoinvestigateF+continuouslybombardingSiCsurfaceswithenergiesof100eVatdifferentincidentanglesat300K.Thesimulatedresultsshowthatthesteady-stateuptakeofFatomsincreaseswithincreasingincidentangle.Withthesteady-stateetchingestablished,aSi-C-Freactivelayerisformed.ItisfoundthattheetchingyieldofSiisgreaterthanthatofC.IntheF-containingreactionlayer,theSiFspeciesisdominantwithincidentangleslessthan30o.Forallincidentangles,theCFspeciesisdominantoverCF2andCF3.

简介：Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.

简介：利用同步辐射（BSRF）漫散射站四圆衍射仪，对SiC体单晶的结构进行了判定以及对利用常压化学气相沉积（APCVD）生长的3C－SiC/Si(001）中的孪晶及含量进行了分析。六方{10-15}极图证明了该SiC单晶为6H（H为Hexagonal的缩写）结构。对3C－SiC外延薄膜，Φ扫描证明了3C－SiC外延生长于Si衬底上，外延取向关系为：（001）3C－SiC//(001)Si,[111]3C-SiC//[111]Si。3C－SiC的{111}极图在x=15.8°出现了新的衍射，采用六方{10-10}极图以及基体倒格点111、孪晶倒格点002的Mapping分析了x=15.8°处产生的衍射为3C－SiC孪晶所致，并利用ω扫描估算了孪晶的含量约为1％。

简介：Sinteredsiliconcarbide(SiC)wasetchedbyadielectricbarrierdischargesource.Ahighvoltagebipolarpulsewasusedwithheliumgasfortheplasmageneration.OnestablefilamentplasmawasgeneratedandcouldbeusedforSiCetching.Astheprocessinggas(NF3)mixingrateincreased,thewidthanddepthoftheetchingprofilebecamenarroweranddeeper.ThedifferentiatedV-QLissajousmethodwasusedformeasuringthecapacitances(Ceq)oftheelectrodeaftertheplasmaturnedon.ThewidthoftheetchingprofilewasproportionaltoCeq.Asthecurrentpeakvalue/smxofthesubstratecurrentincreased,thevolumeremovalrateofSiCincreased.Theetchdepthwasproportionaltotheratioof/smxtoCeq.Additionally,becauseofthedifferentcharacteristicsoftheplasmadisksonSiCsubstratebythevoltagepolarity,theetchingprofilewasunstable.However,inhighNF3mixingprocess,theetchingprofilebecamestableanddeeper.

简介：Ahighlyreliableinterfaceofself-alignedbarrierCuSiNthinlayerbetweentheCufilmandthenano-porousSiC:H(p-SiC:H)cappingbarrier(k=3.3)hasbeendevelopedinthepresentwork.Withtheintroductionofself-alignedbarrier(SAB)CuSiNbetweenaCufilmandap-SiC:Hcappingbarrier,theinterfacialthermalstabilityandtheadhesionoftheCu/p-SiC:Hfilmareconsiderablyenhanced.AsignificantimprovementofadhesionstrengthandthermalstabilityofCu/p-SiC:H/SiOC:Hfilmstackhasbeenachievedbyoptimizingthepre-cleanstepbeforecap-layerdepositionandbyformingtheCuSiN-likephase.ThiscaplayeronthesurfaceoftheCucanprovideamorecohesiveinterfaceandeffectivelysuppressCuatommigrationaswell.

简介：本文扼要阐述了放射性废物处理与处置标准在中放废液大体积浇注水泥固化工程中的应用,针对GB14569.1—93《低、中水平放射性废物固化体性能要求水泥固化体》和GB7023-86《放射性废物固化体长期浸出试验》放射性废物处理与处置标准在中放废液大体积浇注水泥固化工程应用中所存在的问题进行了探讨,并提出了建议。