摘要
Moleculardynamicssimulationswereperformedtostudytheinteractionbetweenatomichydrogenandsiliconcarbide.Inthepresentstudy,wefocusontheeffectofthesurfacetemperatureonHinteractingwithsiliconcarbide.ThesimulationresultsshowthattheretentionofHatomsinthesampledecreaseslinearlywithincreasingsurfacetemperature.ThedepthprofileanalysisshowsthatthesampleismodifiedbyHbombardment,andthedensityofHatomsisgreaterthanthoseofSiandCatomsneartheinterfaceregionbetweentheH-containingregionandthebulk.However,nearthesurfaceregionthedensitiesofH,SiandCatomsarealmostequivalent.Inthemodifiedlayer,thebondsconsistofSi-CandSi-HandC-H.ThefractionofSi-Cbondsisthegreatest.OnlyafewC-Hbondsarepresent.
出版日期
2012年12月22日（中国期刊网平台首次上网日期，不代表论文的发表时间）
