简介：Weexperimentallydemonstratea16×16reconfigurablynonblockingopticalswitchfabricusingaBenesarchitecture.Theswitchfabricconsistsof562×2Mach–Zehnderinterferometerbasedelementaryswitches,witheachintegratedwithapairofwaveguidemicroheaters.Theaverageon-chipinsertionlossis~5.2dBforbothofthe'all-cross'andthe'all-bar'states,withalossvariationof1dBoverallroutingpaths.Thecrosstalkforallswitchingstatesisbetterthan-30dB.Theswitchingtimeoftheswitchelementisabout22μs.Theswitchingfunctionalityisverifiedbytransmissionofa40Gb∕squadraturephase-shiftkeyingopticalsignal.

简介：ThepresolarSiCgrains[1]carrytheoriginalstellarnucleosynthesissignature.Theirisotopicanomaliescomparedtothesunarethestrongconstrainsinthesupernovae(SN)modelcalculations.The15N-excessinsomeSiC-ABgrains(12C/13C<10and14N/15N<272)isoneofthechallengesofcore-collapsesupernovae(CCSNe)models[2].Recently,PignataripointedoutthattheentrainmentofH-richmaterialintotheHeshellbeforetheSNexplosionallowsthecoproductionof13C,15Nand26Al,whichprovidesanewproductionscenarioforSiC-ABgrains[2].IntheHeshellnucleosynthesis,the13Cisproducedthrough12C(p,γ)13N(β+γ)13Creaction.The14Nissynthesizedthrough13N(n,γ)and13C(p,γ)reactions.

简介：Ｒｏｔａｔｉｏｎ　ｉｎ　Ｒｅａｃｔｉｏｎ　１９Ｆ＋５１ＶＲｏｔａｔｉｏｎｉｎＲｅａｃｔｉｏｎ１９Ｆ＋５１Ｖ￥ＷａｎｇＱｉ；ＬｕＪｕｎ；ＸｕＨｕｓｈａｎ；ＬｉＳｏｎｇｌｉｎ；ＺｈｕＹｏｎｇｔａｉａｎｄＺｈａｎｇＹｕｈｕＩｎｄＬｓｓｉ...

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简介：Theeffectofbismuth（Bi）forbothVO2+/VO2+andV3+/V2+redoxcouplesinvanadiumflowbatteries（VFBs）hasbeeninvestigatedbydirectlyintroducingBionthesurfaceofcarbonfelt（CF）.TheresultsshowthatBihasnocatalyticeffectforVO2+/VO2+redoxcouple.Duringthefirstchargeprocess,BiisoxidizedtoBi3+（neverreturnbacktoBimetalinthesubsequentcycles）duetothelowstandardredoxpotentialof0.308V（vs.SHE）forBi3+/BiredoxcouplecomparedwithVO2+/VO2+redoxcoupleandBi3+exhibitno（orneglectable）electro-catalyticactivity.Additionally,therelationshipbetweenBiloadingandelectrochemicalactivityforV3+/V2+redoxcouplewasstudiedindetail.2wt%Bi-modifiedcarbonfelt（2%-BiCF）exhibitsthehighestelectrochemicalactivity.Usingitasnegativeelectrode,ahighenergyefficiency（EE）of79.0%canbeachievedatahighcurrentdensityof160mA/cm2,whichis5.5%higherthanthepristineone.Moreover,theelectrolyteutilizationratioisalsoincreasedbymorethan30%.Eventhecelloperatedat140mA/cm2forover300cycles,theEEcanreach80.9%withoutobviousfluctuationandattenuation,suggestingexcellentcatalyticactivityandelectrochemicalstabilityinVFBs.

简介：金属V作为贮氢材料具有良好的增压性能因而在ICF靶丸制备工艺中备受关注，但是金属V难活化，严重影响了其在增压材料方面的应用。为了改善金属V的活化性能，向金属V中掺杂少量的金属Ni以期达到对其改性和改善其贮氢性能的目的。

简介：全部的内部分区和(尖端)为~(12)在温度被计算直到6000KC~(16)O_2。用计算分区函数，我们生产ν_的线紧张~(12)的3乐队在几高温度的C~(16)O_2。结果证明计算的线紧张在在直到3000K的温度的HITRAN数据库的对那些的很好的同意，它在高温度为尖端和线紧张的计算提供强壮的支持。然后，计算被扩大推进高温度，和ν_的模仿的系列~(12)的3乐队在5000和6000K的C~(16)O_2被报导。

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简介：Vanadiumalloys,especiallythatofV4Cr4Ti,aresupposedasthepromisingcandidatestructuralmaterialforfusionapplicationsfortheirgoodthermalproperties,hightemperaturestrengthandtheinherentlowactivationcharacteristics.However,inrecent

简介：Withabout20permanentstaffandseveralgraduatestudents,IonSourceGroupisdoingpioneeringworkinhighperformanceECRandLaserionsourcedevelopment,ionsourceplasmastudy,ionsourceapplicationandroutineoperationfornationallaboratory.In2016,withthegreatcontributionsoftheteammembers,manyverypromisingresultsandachievementshavebeenmade.FortheroutineoperationofHIRFLfacility,threeionsources,i.e.

简介：Vanadiumalloys(V-Cr-Tiseries)areimportantcandidatematerialsforblanketcomponentsoffusionreactorsduetotheirlowactivationandhighstrengthatelevatedtemperatures.Low-temperatureirradiationembrittlementdeterminestheoperationtemperaturelimitofVanadiumalloysfortheapplicationtostructuralmaterialsoffusionreactorsirradiationresponseofvanadiumalloysneedstobeclarifiedfortheirapplication.Inthepresentstudy,specimensoftwoalloys(V-4Cr-4TiandV-5Cr-5Ti)wereirradiatedwithenergeticHeionsandheavyionstounderstandhardeningofthealloysduetoheliumaccumulationandcascadedamageproduction.

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简介：A16-channeldualtuningwavelengthdivisionmultiplexer/demultiplexerbasedonsilicononinsulatorplatformisdemonstrated,whichisbothpeakwavelengthtunableandoutputopticalpowertunable.Thewavelengthdivisionmultiplexer/demultiplexerconsistsofanarrayedwaveguidegratingforwavelengthdivisionmultiplexing/demultiplexing,aheaterforpeakwavelengthtuningandavariableopticalattenuatorbasedonp–i–ncarrier-injectionstructureforopticalpowertuning.Theexperimentalresultsshowthattheinsertionlossonchipofthedeviceis3.7dB–5.7dBandthecrosstalkis7.5dB–9dB.Forthetunabilityofthepeakwavelength,1.058-nmwavelengthtunabilityisachievedwith271.2-mWpowerconsumption,andtheaveragemodulationefficiencyis3.9244nm/W;forthetunabilityoftheopticalpower,theopticalpowerequalizationisachievedinall16channels,20-dBattenuationisachievedwith144.07-mWpowerconsumption,andtheraise/falltimeofVOAis35ns/42ns.

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简介：Accordingtothewell-establishedlight-to-electricityconversiontheory,resonantexcitedcarriersinthequantumdotswillrelaxtothegroundstatesandcannotescapefromthequantumdotstoformphotocurrent,whichhavebeenobservedinquantumdotswithoutap–njunctionatanexternalbias.Here,weexperimentallyobservedmorethan88%oftheresonantlyexcitedphotocarriersescapingfromInAsquantumdotsembeddedinashort-circuitedp–njunctiontoformphotocurrent.Thephenomenoncannotbeexplainedbythermionicemission,tunnelingprocess,andintermediate-bandtheories.Anewmechanismissuggestedthatthephotocarriersescapedirectlyfromthequantumdotstoformphotocurrentratherthanrelaxtothegroundstateofquantumdotsinducedbyap–njunction.Thefindingisimportantforunderstandingthelow-dimensionalsemiconductorphysicsandapplicationsinsolarcellsandphotodiodedetectors.