MOCVD GaxIn1-xAs1-ySby Alloys and the Infrared Detector-中国期刊网

摘要 GaxIn1-xAs1-ySbyalloyshavebeengrownbyatmosphericpressureMOCVDonn-GaSb（Te-doped）substrate.Thesohdcompositionwasdeterminedbyusingelectronmicroprobe.ThealloysofGalnAsSbwithcompositioninmiscibilitygapweresuccessfullygrown.TheopticalpropertiesofGaxIn1-xAs1-ySbylaverswerecharacterizedbythephotoluminescenceandtheinfraredabsorption.Thespectralresponsesofp+-GaInAsSb/p-GaxIn1-xAs1-ySby/n-GaSbdetectorsshowedwavelengthcutoffat2.4μmanddetectivity-D*=5×108cmHz1/2/Watroomtemperature.

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MOCVD GaxIn1-xAs1-ySby Alloys and the Infrared Detector

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MOCVD GaxIn1-xAs1-ySby Alloys and the Infrared Detector

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