Binding Energy of Positively and Negatively Charged Excitons in GaAs／AlxGa1

摘要 Usingasimpletwo-parameterwavefunction,wecalculatevariationallythebindingenergyofpositivelyandnegativelychargedexcitonsinGaAs/AlxGa1-xAsquantumwellsforwellwidthsfrom10to300A.Weconsidertheeffectofeffectivemass,dielectricconstantmismatchinthetwomaterials,andthewholecorrelationamongtheparticles.Theresultsarediscussedandcomparedindetailwithpreviousexperimentalandtheoreticalresults,whichshowfairagreementwiththem.

1曹小龙;姚建铨;朱能念;徐德刚. Desi, gn of GaAs/AlxGa1-xAs asymmetric quantum wells for THz wave by difference frequency generation.物理电子学,2012-03.
2XIE Wen-Fang. Binding Energy of Excitons in a Quantum Ring.物理,2008-08.
3CHENTingjin;YUANHairong;等. AlxGa1—xAs Solar Cell Grown by Multi—substrate Liquid Phase Epitaxy.物理电子学,1998-02.
4达来木仁;闫祖威;石磊. Effects of hydrostatic pressure and external electric field on the impurity binding energy in strained GaN/AlxGa1-xN spherical quantum dots.物理电子学,2012-03.
5Hui Sun;Hua Li;Qiang Tian. Fractal dimension study of polaron effects in cylindrical GaAs/AlxGa1-xAs core-shell nanowires.物理,2018-02.
6ZHUANGWanru ZOUZhengzhong 等. Diffusion of Zinc in InxCa1—xAs,InP and GaAs.物理电子学,1996-01.
7ZHANGShu－zhi;HUANGBo－biao;等. （AlxGa1—x）yIn1—yP Films an Its Optical Constants on the Surface.物理电子学,1999-02.
8牛秉慧;闫腾飞;倪海桥;牛智川;张新惠. Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells.物理,2016-10.
9YANGKai-Hua;Guang-Shan;HANRu-Qi. The Binding Energy, Spin－Excitation Gap, and Charged Gap in the Boson－Fermion Model.物理,2003-02.
10孙庆灵;王禄;江洋;马紫光;王文奇;孙令;王文新;贾海强;周均铭;陈弘. Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors.物理,2016-10.

Binding Energy of Positively and Negatively Charged Excitons in GaAs／AlxGa1—xAs Quantum Wells

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Binding Energy of Positively and Negatively Charged Excitons in GaAs／AlxGa1—xAs Quantum Wells

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