简介：Anultra-highspeed1:2demultiplexerforopticalfibercommunicationsystemsisdesignedutilizingtheIHP0.25μmSiGeBiCMOStechnology.Thelatchofthedemultiplexercorecircuitisresearched.Basedonthecurrentmeasurementcondition,ahigh-gainandwide-bandwidthclockbufferisdesignedtodrivelargeload.Transmissionlinetheoryforultra-highspeedcircuitsisusedtodesignmatchingnetworktosolvethematchingproblemamongtheinput,outputandinternalsignals.Thetransientanalysisshowsthatthisdemultiplexercandemultiplexone100Gb/sinputintotwo50Gb/soutputs.Thechipareaofitis0.7mm×0.47mm,theinputandoutputdataarebothat400mVP-PPCMLstandardvoltagelevel,andthepowerconsumptionoftheICis900mWatthepowersupplyof-4V.

简介：已经有130多年历史的柯尼卡公司和70多年历史的美能达公司从2003年的秋天开始逐渐淡出人们的视野，真正成为“历史”，取而代之的是两者的“合壁”柯尼卡美能达(kenihminolta)。自今年1月发表经营合并以来，经过5月份股份交换合同的签定、6月份股东大会上对股份交换合同的表决认可，在8月5日通过交换股份方式实施了经营合并，10月1日实施了集团内事业的整合，日本柯尼卡株式会社和美能达株式会社的合并重组终于尘埃落定。

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简介：据《每日科学》报道,来自肯塔基大学、德国戴姆勒公司及希腊电子结构和激光研究所（IESL）的科学家们合作发现了一种单原子厚度的新型平面材料,该材料可替代石墨烯材料,并将推动数字技术的进步。尽管现在石墨烯备受瞩目,被认为是世界上最强韧的材料,但却有一个显见的不足——它不是半导体,这对其在数字产业的应用来说无疑是个打击。新材料由硅、硼、氮元素组成,3种元素都有重量轻、价格低、储量大的优点。此外,

简介：Thispaperpresentsanewarraystructureforestimatingtwo-dimensional(2-D)direction-of-arrivals(DOAs).ThestructureiscalledY-shapedarray,whichhas10%betteraccuracypotentialthanthenewly-developedL-shapedarray.Agreatmeritisitsabilitytoestimate2-DDOAswhicheverdirectionsthearrivingsignalscomefrom,comparedwithL-shapedarraywhoseperformancedependsonDOAs.Simulationresultsaregiventodemonstratetheperformanceofthenewarray.

简介：11月11日．苹果电脑公司宣布正式推出U2iPod。此举被视为苹果公司与U2乐队及环球唱片(UMG)为数码音乐新时代携手共创革新产品的一部分。这款全新的U2iPod能够容纳5000首歌曲。它拥有黑色外壳及红色的点击式转盘，背面还刻有U2乐队全体成员签名。

简介：Aterahertz（THz）polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide（VO2）.WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.

简介：＊高精密度，灵活性强－0201（0．6mm×0．3mm）-SOIC，PLCC

简介：<正>富士电机将在深圳建设功率半导体的后工序生产基地,新设功率半导体的后工序组装及检测设备,同时还将建设新厂房。新的生产基地预定从2012年9月开始运转。产能方面,目前计划月产5万个,新厂房完工后再扩大生产规模。据介绍,此次的投资额为15.3亿日元。

简介：<正>随着千禧年的到来,企业上网已成为今年风头最劲的话题。Internet在国内的应用日益广泛,越来越多的企业和政府机关借助互联网为公众提供服务,并以此宣传自身的形象。要提供这种服务主要有两种途径:一是采用ISP提供的虚拟服务器,缺点是不利于数据的实时更新和系统的修改;第二条途

简介：AninitialstructuredesignofMMI1×8opticalpowersplittersisreported.ThewaveguidematerialisSi-basedSiO2Ge-dopedanddepositedbyPECVDmethod.Embeddedstripstructureisimpliedinthesectiondesign.ByusingBPM-CAD,afavorableresultisobtainedthatthisdevicehasasounduniformityandfairlylowloss.Meanwhile,simulationsofdesignswithcertainchangedparametersisalsoimplementedforabetterdesignconfiguration.

简介：因特网已成为全球最大的信息基础设施，在全球宽带化、移动化、IP化、融合化、个性化大潮中，IPv6的海量地址支持及改进的业务解析能力与PeertoPeer（P2P）对等互联及有效宽带资源共享传送能力相组合，可以期望将会对开启未来信息通信网络新时代做出新的贡献!

简介：Ｓｉｌｉｃｏｎ－ｏｎ－ｉｎｓｕｌａｔｏｒ１×２Ｙ－ｊｕｎｃｔｉｏｎＯｐｔｉｃａｌＳｗｉｔｃｈＢａｓｅｄｏｎＷａｖｅｇｕｉｄｅ－ｖａｎｉｓｈｉｎｇＥｆｅｃｔ①②ＺＨＡＯＣｅｚｈｏｕ（Ｍｉｃｒｏｅｌｅｃｔｒｏｎ．Ｉｎｓｔｉｔｕｔｅ，ＸｉｄｉａｎＵｎｉｖｅ...

简介：UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.

简介：Thesilicon-on-insulator(SOI)1×2Y-junctionopticalwaveguideswitchhasbeenproposedandfabricated,whichisbasedonthelargecross-sectionsingle-moderibwaveguidecondition,thewaveguide-vanishingeffectandthefree-carrierplasmadispersioneffect.Intheswitch,theSOItechniqueutilizersiliconandsilicondioxidethermalbondingandback-polishing.Theinsertionlossandextinctionratioofthedevicearemeasuredtobelessthan4.78dBand20.8dBrespectivelyatawavelengthof1.3μmandaninjectioncurrentof45mA.Responsetimeisabout160ns.

简介：Themixedl1/H2optimizationproblemforMIMO(multipleinput-multipleoutput)discrete-timesystemsisconsidered.Thisproblemisformulatedasminimizingthel1-normofaclosed-looptransfermatrixwhilemaintainingtheH2-normofanotherclosed-looptransfermatrixatprescribedlevel.ThecontinuitypropertyoftheoptimalvalueinrespecttochangesintheH2-normconstraintisstudied.Theexistenceoftheoptimalsolutionsofmixedll/H2problemisproved.Becausethesolutionofthemixedl1/H2problemisbasedonthescaled-Qmethod,itavoidsthezerointerpolationdifficulties.Theconvergentupperandlowerboundscanbeobtainedbysolvingasequenceoffinitedimensionalnonlinearprogrammingforwhichmanyefficientnumericaloptimizationalgorithmsexist.

简介：Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.

简介：WefabricatepolycrystallineCu(In,Ga)Se2(CIGS)filmsolarcellsonpolyimide(PI)substrateattemperatureof450°Cwithsingle-stageprocess,andobtainapoorcrystallizationofCIGSfilmswithseveralsecondaryphasesinit.Forimprovingitfurther,thetwo-stageprocessisadoptedinsteadofthesingle-stageone.AnextraCu-richCIGSlayerwiththethicknessfrom100nmto200nmisgrownonthesubstrate,andthenanotherCu-poorCIGSfilmwiththicknessof1.5-2.0μmisdepositedonit.Withthemodificationoftheevaporationprocess,thegrainsizeofabsorberlayerisincreased,andtheadditionalsecondaryphasesalmostdisappear.Accordingly,theoveralldeviceperformanceisimproved,andtheconversionefficiencyisenhancedbyabout20%.

简介：Wetheoreticallypresenttheintrinsiclimitstoelectronmobilityinthemodulation-dopedAlGaN/GaNtwo-dimensionalelectrongas(2DEG)duetoeffectsincludingacousticdeformationpotential(DP)scattering,piezoelectricscattering(PE),andpolar-opticphononscattering(POP).WefindthatDEandPEarethemoresignificantlimitingfactorsatintermediatetemperaturesof40Kto250K,whilePOPbecomesdominantasroomtemperatureisapproached.Detailednumericalresultsarepresentedforthechangeofelectronmobilitywithrespecttotemperatureandcarrierdensity.Weconcludethatthesethreetypesofphononscattering,whicharegenerallydeterminedbythematerialpropertiesbutnotthetechnicalprocessing,arehardlimitstothe2DEGmobility.

简介：拉脱维亚的主要电信提供商Tele2SIA（瑞典Tele2AB的分公司）已经与西门子签订了合同，扩展其GSM网络并且建立完整的3G／W-CDMA网络基础设施。