简介：La9.33Si6O26氧离子导体被稳固的州的reactionmethod.Its综合结构被单个水晶的X光检查衍射分析在结果显示出的roomtemperature.The决定那La9.33Si6O26氧化物让磷灰石组织，空间groupP6_3/m.AC阻抗大小显示了在氮的氧化物sintered在空中比那些sintered有高得多的电导率。传导性上的谷物边界的效果被讨论。

简介：碳族元素这一章除了一些规律性的知识外,还出现了一些特例,对这些特例,应该进行归纳总结并加以重视.1.一般情况下,较强氧化剂+较强还原剂较弱氧化剂+较弱还原剂,而C却能还原出还原性比它更强的Si（根据碳族元素性质递变顺序可知,非金属性有C>Si,而单质的还原性有C<Si）,发生的反应为SiO2

简介：MoleculardynamicssimulationsareperformedtoinvestigateCF3continuouslybom-bardingtheamorphoussiliconsurfacewithenergiesof10eV,50eV,100eVand150eVatnormalincidenceandroomtemperature.TheimprovedTersoff-Brennerpotentialswereused.Thesimu-lationresultsshowthatthesteady-stateetchingratesareabout0.019,0.085and0.1701for50eV,100eVand150eV,respectively.Withincreasingincidentenergy,atransitionfromC-richsurfacetoF-richsurfaceisobserved.IntheregionmodifiedbyCF3,SiFandCFspeciesaredominant.

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简介：Anovelapproachoftwo-steplasercrystallizationforthegrowthofpoly-Sithinfilmonglasssubstrateisinvestigated.Usingthisapproach,wefabricatedpoly-Sithinfilmtransistorswithelectronmobilityof103cm^2/V·sandon/offcurrentrationof1×10^7,Theyarebetterthanthoseofthepoly-SiTFTsfabricatedbyconventionalsingle-stepexcimerlasercrystallization.Wealsoanalyzedthestructureofthelasercrysallizedpoly-Sithinfilmandcalculatedtheellipsometricspectra.Thecalculatedresultsareingoodagreementwiththemeasuredresults.

简介：N-ZnO/p-Si异质接面被内在的ZnO电影的劈啪作响的免职在希腊语的第二十三个字母底层上准备。ZnO电影的厚度被从1h改变免职时间到3h改变。这些结构的电的性质从电容电压(C-V)被分析并且当前电压(I-V)特征表现在一个黑暗房间里。结果证明所有样品显示出强壮的修正行为。为有ZnO电影的不同厚度的样品的光电的性质被测量开的电路电压和短路电流调查。相片电压被坚守，这被发现当光电流变化时，与厚度一起的320mV几乎不变很多。ZnO电影的厚度的功能被调查的光电的效果的变化机制。

简介：TheagingbehaviorsofirradiatedtungstenbyhighenergySi3＋andH＋ionsaremainlyinvestigatedusinginternalfriction（IF）methodcombinedwithSEMtechnology.TheSEManalysisindicatesthatmoresevereirradiationdamageappearsinthesurfaceofsimultaneousdualSi3＋H＋irradiatedspecimenthanthatinthesequentialdualSi3＋H＋irradiatedspecimenorthesingleSi3＋irradiatedspecimensbecauseofthesynergisticeffectofSiandHirradiation.TheIFbackgroundoftheirradiatedsampleisaboutoneorderofmagnitudehigherthanthatoftheunirradiatedsampleowingtotheexistenceofhighdensityfreshdislocationsinducedbySi/Hirradiation,InthesequentialdualSi3＋andH＋irradiatedspecimen,thehydrogenSnoek-Ke-Koster（SKK）peakassociatedwiththemovementofdislocationsdragginghydrogenatomsisobservedanditsheightdecreaseswithagingtimeatroomtemperature.AsforthesimultaneousdualSi3＋H＋irradiatedspecimen,however,thereisnosuchhydrogenSKKpeak.Thereasoncanbeexplainedashydrogendiffusionandpinningeffectofdislocations.

简介：ＭｏｓｓｂａｕｅｒＥｆｆｅｃｔｏｆＲａｐｉｄｌｙＱｕｅｎｃｈｅｄＡｌ－Ｆｅ－Ｖ－Ｓｉ－ＭｍＡｌｌｏｙｓＷａｎｇＪｉａｎｑｉａｎｇ（王建强），ＣｈａｏＹｕｅｓｈｅｎｇ（晁月盛），ＺｅｎｇＭｅｉｇｕａｎｇ（曾梅光），ＺｈａｎｇＢａｏｊｉｎ（张宝金），Ｃｈ...

简介：Al-inducedlateralcrystallizationofamorphoussiliconthinfilmsbymicrowaveannealingisinvestigated.ThecrystallizedSifilmsareexaminedbyopticalmicroscopy,Ramanspectroscopy,transmissionelectronmicroscopyandtransmissionelectrondiffractionmicrography.Aftermicrowaveannealingat480℃for50min,theamorphousSiiscompletelycrystallizedwithlargegrainsofmain(111)orientation.Therateoflateralcrystallizationis0.04μm/min.Thisprocess,labeledMILC-MA,notonlylowersthetemperaturebutalsoreducesthetimeofcrystallization.ThecrystallizationmechanismduringmicrowaveannealingandtheelectricalpropertiesofpolycrystallineSithinfilmsareanalyzed.ThisMILC-MAprocesshaspotentialapplicationsinlargeareaelectronics.

简介：Thisstudyaimstoinvestigatetheeffectofthe1-stepquenchingandpartitioning(Q&P)processonthemicrostructureandtheresultingVicker’shardnessof0.3C-1.5Si-1.5Mnsteelbyusingin-situdilatometry,opticalmicroscopy(OM),scanningelectronmicroscopy(SEM),X-raydiffractometry(XRD),andVicker’shardnessmeasurement.Systematicanalysesindicatethatthemicrostructureofthespecimensquenchedandpartitionedat150℃,200℃,250℃,and300℃mainlycompriseslathmartensiteandretainedaustenite.Thedilatometrycurveofthespecimenpartitionedat150℃ispresumablyascribedtotheformationofisothermalmartensite.Intheearlystagesofpartitioningat200℃,thenearlyunchangeddilatationcurveiscloselyrelatedtothesynergisticeffectofisothermalmartensiteformationandtransitionalepsiloncarbideprecipitation.Inthelaterstagesofpartitioningat200℃,theslightincreaseinthedilatationcurveisduetothecontinuousisothermalmartensiteformation.Withfurtherincreaseinpartitioningtemperatureto250℃,thedilatationincreasesgraduallyupto3600s,whichisrelatedtocarbonpartitioningandlowerbainiteformation.Partitioningatahighertemperatureof300℃causesarapidincreaseinthedilatationcurveduringtheinitialstages,whichsubsequentlylevelsoffuponprolongingthepartitioningtime.Thisismainlyattributedtotherapiddiffusionofcarbonfromathermalmartensitetoretainedausteniteandcontinuousformationoflowerbainite.

简介：摘要：Si基GaN因其在制备功率电子器件领域重大的应用优势，且具有低衬底成本，衬底8英寸技术非常成熟，使得Si基GaN(GaN-on-Si)电子器件的社会经济效益比较高，在5G通信领域应用前景比较明朗。本文介绍了GaN-on-Si器件在5G通信领域内的技术应用趋势，以及所面临的市场竞争。

简介：Hybridoctagonal-ringmicrolasersareinvestigatedforrealizingastableoutputfromasiliconwaveguidebasedonatwo-dimensionalsimulation.Theinnerradiusoftheringisoptimizedtoachievesingle-modeandlow-thresholdoperation.Usingthedivinylsiloxane-benzocyclobutene(DVS-BCB)bondingtechnique,ahybridAlGaInAs/Sioctagonal-ringmicrolaserverticallycoupledtoasiliconwaveguideisfabricatedwithasidelengthof21.6μmandaninnerradiusof15μm.Asingletransverse-modeoperationisachievedwithathresholdcurrentdensityof0.8kA∕cm~2andaside-modesuppressionratioabove30dB,andastableoutputfromthelowersiliconwaveguideisobtained.

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简介：用X射线摇摆曲线和掠入射衍射、透射电镜、原子力显微镜等实验技术研究了MBE方法生长的Si缓冲层生长温度对SiGe／Si异质结结构的影响。结果表明，所研究的SiGe外延层晶格发生完全弛豫，但表面粗糙度和界面失配位错随Si缓冲层的生长温度而变化，最佳生长温度为450℃；缓冲层晶格应变是达到高质量SiGe外延层的主要原因。

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简介：针对方大特钢公司60Si2Mn弹簧扁钢产品出现剪切端面裂纹问题,进行裂纹检测、剪切温度试验和不同温度下力学性能检测;分析发现剪切时的温度对裂纹产生的影响,发现剪切裂纹是剪切应力作用于偏析较严重部位形成的裂纹源在残余应力释放过程中扩展形成的横向裂纹.根据分析结果,在生产实践中分别对炼钢、轧制工序采取相应措施,有效控制了弹簧扁钢的剪切端面裂纹.

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