简介：Aplasmonicrefractiveindexsensorbasedonmetal-insulator-metal(MIM)waveguide-coupledstructureisproposedanddemonstratedinthispaper.Thephysicalmechanismofthedeviceisdeduced,andthefinitedifferencetimedomain(FDTD)methodisemployedtosimulateandstudyitsindexsensingcharacteristics.Bothanalyticandsimulatedresultsshowthattheresonantwavelengthofthesensorhasalinearrelationshipwiththerefractiveindexofmaterialundersensing.Basedontherelationship,therefractiveindexofthematerialcanbeobtainedfromthedetectionoftheresonantwavelength.Theresultsshowthatthesensitivityofthesensorcanexceed1600nm/RIU,anditcanbeusedinchemicalandbiologicaldetections.

简介：Thispaperpresentsanewarraystructureforestimatingtwo-dimensional(2-D)direction-of-arrivals(DOAs).ThestructureiscalledY-shapedarray,whichhas10%betteraccuracypotentialthanthenewly-developedL-shapedarray.Agreatmeritisitsabilitytoestimate2-DDOAswhicheverdirectionsthearrivingsignalscomefrom,comparedwithL-shapedarraywhoseperformancedependsonDOAs.Simulationresultsaregiventodemonstratetheperformanceofthenewarray.

简介：是的巨大的部门操作广泛地为象图形的处理那样的设备作为最昂贵的操作之一接受了联合起来的完美地匹配的层(CPML)算法受不了的卷绕旋转的平行加速(GPU)，地可编程的门数组(FPGA)等等。在更高的效率和更低的电源消费的追求，这篇文章重游CPML理论并且建议了新快没有部门的平行CPML结构。由最佳地重排CPML内部重复进程，所有部门操作符能被recalculating消除并且代替脱机更新系数的相关的域。实验证明没有任何精确性损失，建议没有部门的结构能节省超过50%算术指令和传统的平行CPML结构的25%实行时间。

简介：Theproblemofadaptivefuzzycontrolforaclassoflarge-scale,time-delayedsystemswithunknownnonlineardead-zoneisdiscussedhere.Basedontheprincipleofvariablestructurecontrol,adesignschemeofadaptive,decentralized,variablestructurecontrolisproposed.Theapproachremovestheconditionsthatthedead-zoneslopesandboundariesareequalandsymmetric,respectively.Inaddition,itdoesnotrequirethattheassumptionsthatallparametersofthenonlineardead-zonemodelandthelumpeduncertaintyareknownconstants.Theadaptivecompensationtermsoftheapproximationerrorsareadoptedtominimizetheinfluenceofmodelingerrorsandparameterestimationerrors.Bytheoreticalanalysis,theclosed-loopcontrolsystemisprovedtobesemi-globallyuniformlyultimatelybounded,withtrackingerrorsconvergingtozero.Simulationresultsdemonstratetheeffectivenessoftheapproach.

简介：AnewSOI(SiliconOnInsulator)highvoltagedevicewithStepUnmovableSurfaceCharges(SUSC)ofburiedoxidelayeranditsanalyticalbreakdownmodelareproposedinthepaper.Theunmovablechargesareimplementedintotheuppersurfaceofburiedoxidelayertoincreasetheverticalelectricfieldanduniformthelateralone.The2-DPoisson'sequationissolvedtodemonstratethemodulationeffectoftheimmobileinterfacechargesandanalyzetheelectricfieldandbreakdownvoltagewiththevariousgeometricparametersandstepnumbers.AnewRESURF(REduceSURfaceField)conditionoftheSOIdeviceconsideringtheinterfacechargesandburiedoxideisderivedtomaximizebreakdownvoltage.Theanalyticalresultsareingoodagreementwiththenumericalanalysisobtainedbythe2-DsemiconductordevicessimulatorMEDICI.Asaresult,an1200Vbreakdownvoltageisfirstlyobtainedin3μm-thicktopSilayer,2μm-thickburiedoxidelayerand70μum-lengthdriftregionusingalineardopingprofileofunmovableburiedoxidecharges.