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简介:Anenergymeasurementsysteminalarge-aperturehighpowerlaserexperimentplatformisintroduced.Theentiremeasurementsystemincludesfivecalorimeters,whichcarryouttheenergymeasurementofthefundamentalfrequencybeforethefrequencyconversionunit,remainingfundamentalfrequency,remainingsecond-harmonics,third-harmonics,aswellastheenergybalancemeasurementafterthefrequencyconversionunit.Combinationalindirectcalibrationanddirectcalibrationareemployedtocalibratethesamplingcoefficientsofthecalorimeters.Theanalysisofthedatashowedthat,regardingtheenergybalancecoefficients,combinationalcalibrationapproachgivesahigherprecision,andleadstoanenergybalancewith1%;andregardingtheenergysamplingcoefficientsforthevariouswavelengthsafterthefrequencyconversion,theresultsfromdirectandcombinationalcalibrationareconsistent.Theuncertaintiesforallenergysamplingcoefficientsarewithin3%,whichguaranteesthereliabilityoftheenergymeasurementforthelaserfacility.
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简介:Fourkeyreactions,12C(,)13O,13C(,n)16O,25Mg(p,)26Aland19F(p,)16O,willbestudiedforthefirsttimewithinorneartheastrophysicalrelevantenergyregions(Gamowwindow)atJinpingUndergroundlaboratoryforNuclearAstrophysics(JUNA)[1],whichwilltaketheadvantageoftheultra-lowbackgroundofChinaJinPingundergroundLaboratory(CJPL),highcurrentacceleratorbasedonECRsourceandahighlysensitivedetectionsystem.
简介:Inthispaper,normalincidenceverticalp-i-nphotodetectorsonagermanium-on-insulator(GOI)platformweredemonstrated.Theverticalp-i-nstructurewasrealizedbyion-implantingboronandarsenicatthebottomandtopoftheGelayer,respectively,duringtheGOIfabrication.Abruptdopingprofileswereverifiedinthetransferredhigh-qualityGelayer.Thephotodetectorsexhibitadarkcurrentdensityof~47mA∕cm~2at-1Vandanopticalresponsivityof0.39A/Wat1550nm,whichareimprovedcomparedwithstate-of-the-artdemonstratedGOIphotodetectors.Aninternalquantumefficiencyof~97%indicatesexcellentcarriercollectionefficiencyofthedevice.Thephotodetectorswithmesadiameterof60μmexhibita3dBbandwidthof~1GHz,whichagreeswellwiththeoreticalcalculations.Thebandwidthisexpectedtoimproveto~32GHzwithmesadiameterof10μm.ThisworkcouldbesimilarlyextendedtoGOIplatformswithotherintermediatelayersandpotentiallyenrichthefunctionaldiversityofGOIfornear-infraredsensingandcommunicationintegratedwithGeCMOSandmid-infraredphotonics.