摘要
Inthispaper,normalincidenceverticalp-i-nphotodetectorsonagermanium-on-insulator(GOI)platformweredemonstrated.Theverticalp-i-nstructurewasrealizedbyion-implantingboronandarsenicatthebottomandtopoftheGelayer,respectively,duringtheGOIfabrication.Abruptdopingprofileswereverifiedinthetransferredhigh-qualityGelayer.Thephotodetectorsexhibitadarkcurrentdensityof~47mA∕cm~2at-1Vandanopticalresponsivityof0.39A/Wat1550nm,whichareimprovedcomparedwithstate-of-the-artdemonstratedGOIphotodetectors.Aninternalquantumefficiencyof~97%indicatesexcellentcarriercollectionefficiencyofthedevice.Thephotodetectorswithmesadiameterof60μmexhibita3dBbandwidthof~1GHz,whichagreeswellwiththeoreticalcalculations.Thebandwidthisexpectedtoimproveto~32GHzwithmesadiameterof10μm.ThisworkcouldbesimilarlyextendedtoGOIplatformswithotherintermediatelayersandpotentiallyenrichthefunctionaldiversityofGOIfornear-infraredsensingandcommunicationintegratedwithGeCMOSandmid-infraredphotonics.
出版日期
2017年06月16日（中国期刊网平台首次上网日期，不代表论文的发表时间）
