简介：TheMOCVDgrowthofmodifiedAlAs/GaAsdoublebarrierresonanttunnelingdiodes(DBRTD)withanA1GaAschairwasreported.Theresonancestothefirstexcitedstateswereobtained.Thepeak-to-valleycur-rentratio(PVCR)is1.3at77K,roomtemperaturepeakcurrentdensityis8kA/cm~2.Theresonancevoltagesareinagreementwiththetheoreticalapproachbytransfer-matrixmethod.Influenceofinterruptedgrowthtimeatthehetero-interfaceandincorporationoftheAlGaAschairtothedeviceperformanceswerestudiedandthemechanismwasdiscussed.TheattempttoaddanAlGaAschairtotheDBRTDbyMOCVDresultedinimprovementinthePVCRandpeakcurrentdensity.

简介：TheelectronicstructuresofspinelMgAl2O4andMgOtunnelbarriermaterialswereinvestigatedusingfirst-principlesdensityfunctionaltheorycalculations.OurresultsshowthatsimilarelectronicstructuresarefoundfortheMgAl2O4andMgOtunnelingbarriers.ThecalculateddirectenergygapsattheΓ-pointareabout5.10eVforMgAl2O4and4.81eVforMgO,respectively.BecauseofthesimilarfeatureinbandstructuresfromΓhigh-symmetrypointtoFpoint(△band),thecoherenttunnelingeffectmightbeexpectedtoappearinMgAl2O4-basedMTJslikeinMgO-basedMTJs.ThesmalldifferenceofthesurfacefreeenergiesofFe(2.9J.m-2)andMgAl2O4(2.27J·m-2)onthe{100}orientation,andthesmallerlatticemismatchbetweenMgAl2O4andferromagneticelectrodesthanthatbetweenMgOandferromagneticelectrodes,thespinelMgAl2O4cansubstituteMgOtofabricatethecoherenttunnelingandchemicallystablemagnetictunneljunctionstructures,whichwillbeappliedinthenextgenerationreadheadsorspintronicdevices.