简介:为了集成电路的低成本和高性能设计,文章通过设计SiGe异质结双极晶体管的结构和工艺,给出了微波无线通讯系统的集成方案,从而解决了现行Si器件在高频领域的噪声、速度和带宽问题,同时为CMOS的兼容性提供了技术保障。
简介:TheDCcharacteristicsofSiGeHBTirradiatedatdifferentelectrondosehavebeenstudiedinacomparisonwiththoseofSiBJT.Generally,IbandIb-Ib0increase,Ic,Ic-Ic0andits+/-transitionVbeaswellasDCcurrentgainβdecreaseswithincreasingdose;increaseofIb-Ib0withincreasingdoseforSiBJTismuchlargerthanthatforSiGeHBT;βincreaseswithVbeorIb,butdecreasesatIb<0.25mAwithIb,andcongregatesathigherdose;andadamagefactord(β)ismuchlessatthesamedoseforSiGeHBTthanforSiBJT.SiGeHBThasmuchbetteranti-radiationperformancethanSiBJT.SomeanomalousphenomenaforincreaseofIc,Ic-Ic0,Ib-Ib0andβatlowdosehavebeenfound.Someelectrontrapshavebeenmeasured.Themechanismofchangesofcharacteristicsisdiscussed.