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简介：利用MATLAB软件模拟了核裁军核查领域中用于核部件认证的中子计数截断成像方法的处理流程,研究了该方法的有效性和入侵性。通过引入截断矩阵,使该方法具备了通过调节截断参数改变入侵性的能力。数值模拟结果表明,通过限制探测器计数方式,可以在满足认证结果有效的同时,降低主动中子成像技术的入侵性。

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简介：Wehavedesignedandrealizedanathermal4-channelwavelength（de-）multiplexerinsiliconnitride（SIN）.Minimizedthermalsensitivityisachievedinawidewavelengthrangebyusingwideandnarrowwaveguideswithlowanddifferentthermal-opticcoefficientsinthetwoarmsofMach-Zehnderinterferometers（MZIs）.TheSiNcorelayerandSiO2claddinglayersaredepositedbyalow-temperatureplasma-enhancedchemicalvapordep-ositionprocess.ThefabricatedMZIfilterexhibitsathermalsensitivitywithin4-2.0pm/℃inawavelengthrangeof55nmtonear1300nm.Then,anathermal（de-）multiplexerbasedoncascadedMZIshasbeendemonstratedwithacrosstalk〈-22dBandathermalsensitivity〈4.8pm/℃forallfourchannels,reducedby77%comparedtoaconventionalSiN（de-）multiplexer.OwingtothepassiveoperationandcompatibilitywiththeCMOSback-endprocess,ourdeviceshavepotentialapplicationsin3Dintegrationofphotonicsandelectronics.

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简介：Inthiswork,SMAT(surfacemechanicalattritiontreatment)wasperformedonTi6Al4V.PlasmanitridingoftheSMATedsampleswasinvestigatedincomparisonwithcoarse-grainedsamples.Thesampleswerecharacterizedusingopticmicroscope,SEM,TEMandVickersmicrohardnesstester.TheresultsshowedthatasignificantlythickercompoundlayerwithhigherhardnesswasobtainedfortheSMATedsampleswhencomparedwithun-SMATedsamplesafternitriding.CorrosionresistanceofTi6Al4VinaRinger’ssolutionwasstudiedbyelectrochemicaltechniquesincludingopencircuitpotentialmeasurement,potentiodynamicpolarizationandEIS(electrochemicalimpedancespectroscopy).Overall,ourresultsidentifiedthebeneficialimpactsoftheduplexSMAT/nitridingtreatmentoncorrosionbehaviourofTi6Al4V.Weartestswerealsoperformedonaball-on-disctribometerwherethetreatedsampleswererubbedagainsta6mmdiameteraluminaballunderanormalloadof5NusingRinger’ssolutionaslubricantmedia.ThefrictioncoefficientoftheSMATedandnitridedsampleswasreducedcomparedtotheuntreatedsamples.WearratesdemonstratedthatSMATcombinedwithnitridingimprovedwearresistanceofTi6Al4Valloy.

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简介：ThenovelverticallystandingPtSe2filmontransparentquartzwaspreparedbyselenizationofplatinumfilmdepositedbythemagnetronsputteringmethod,andanNd：LuVO4passivelymode-lockedsolid-statelaserwasrealizedbyusingthefabricatedPtSe2filmasasaturableabsorber.TheX-raydiffractionpatternandRamanspectrumofthefilmindicateitsgoodcrystallinitywithalayeredstructure.ThethicknessofPtSe2filmismeasuredtobe24nmaccordingtothecross-sectionheightprofileoftheatomicforcemicroscopeimage.High-resolutiontransmissionelectronmicroscopyimagesclearlydemonstrateitsverticallystandingstructurewithaninterlayerdistanceof0.54nmalongthec-axisdirection.Themodulationdepth（AT）andsaturationfluence（Фs）ofPtSe2filmaremeasuredtobe12.6%and17.1μJ/cm2,respectively.Theobtainedmode-lockedlaserspectrumhasacentralwavelengthof1066.573nm,witha3dBbandwidthof0.106nm.Thetransformlimitedpulsewidthofthemode-lockedlaserwascalculatedtobe15.8ps.Amaximumaverageoutputpowerof180mWwithaworkingrepetitionrateof61.3MHzisobtained.Tothebestofourknowledge,thisisthefirstreportofthegenerationofultrafastmode-lockedlaserpulsesbyusinglayeredPtSe2asasaturableabsorber.

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