简介：ThisworkinvestigatedC2F6/O2/ArplasmachemistryanditseffectontheetchingcharacteristicsofSiCOHlow-kdielectricsin60MHz/2MHzdual-frequencycapacitivelycoupleddischarge.FortheC2F6/Arplasma,theincreaseinthelow-frequency(LF)powerledtoanincreasedionimpact,promptingthedissociationofC2F6withhigherreactionenergy.Asaresult,fluorocarbonradicalswithahighF/Cratiodecreased.Theincreaseinthedischargepressureledtoadecreaseintheelectrontemperature,resultinginthedecreaseofC2F6dissociation.FortheC2F6/O2/Arplasma,theincreaseintheLFpowerpromptedthereactionbetweenO2andC2F6,resultingintheeliminationofCF3andCF2radicals,andtheproductionofanF-richplasmaenvironment.TheF-richplasmaimprovedtheetchingcharacteristicsofSiCOHlow-kfilms,leadingtoahighetchingrateandasmoothetchedsurface.

简介：Basedonthefundamentalideasconcerningmicrowaveattenuationinplasma,weobtainanewexpressionoftransmissionattenuationofmicrowavesasafunctionoftheincidentwavefrequency.Andwithreasonablehypothesis,analyticalformsoftheelectrondensityandtheelectron-neutralcollisionfrequencyarederivedfromtheequationsofthetransmissionattenuationofmicrowavesattwonearfrequencies.Thismethodgivesaneffectiveandeasyapproachtodiagnosetheunmagnetizedplasma.

简介：Azero-dimensionalmodelwhichincludes56speciesofreactantsand427reactionsisusedtostudythebehaviorofchargedparticlesinatmosphericplasmaswithdifferentionizationdegreesatlowaltitude(near0km).TheconstantcoefficientnonlinearequationsaresolvedbyusingtheQuasi-steady-stateapproximationmethod.Theelectronlifetimesareobtainedforafterglowplasmawithdifferentinitialvalues,andthetemporalevolutionsofthemainchargedspeciesarepresented,whicharedominantinreactionprocesses.Theresultsshowthattheelectronnumberdensitydecaysquickly.Thelifetimesofelectronsareshortenedbyabouttwoorderswithincreasingionizationdegree.Electronsthenattachtoneutralparticlesandproducenegativeions.Whentheinitialelectrondensitiesareintherangeof1010～1014cm3,thenegativeionshavesufficientlyhighdensitiesandlonglifetimesforairpurification,disinfectionandsterilization.Electrons,O2,O4,CO4andCO3arethedominantnegativespecieswhentheinitialelectrondensityne0≤1013cm3,andonlyelectronsandCO3areleftwhenne0≥1015cm3.N+2,N+4andO+2aredominantinthepositivechargesforanyionizationdegree.Otherpositivespecies,suchasO+4,N+3,NO+,NO+2,Ar+2andH3O+·H2O,aredominantonlyforacertainionizationdegreeandinacertainperiod.

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简介：WehavedevelopedaplasmaetchingsimulatortoinvestigatetheevolutionofpatternprofilesinSiO2materialunderdifferentplasmaconditions.Thismodelfocusesonenergyandangulardependentetchingyield(physicalsputteringinthispaper),neutralandionangulardistributions,andreflectionofionsorneutralsonthesurfaceofaphotoresistorSiO2.TheeffectofpositivechargeaccumulationonthesurfaceofinsulatedmaskorSiO2isstudiedandthechargeaccumulationcontributestoadeflectionofiontrajectory.Thewaferprofileevolutionhasbeensimulatedusingacellular-automata-likemethodunderradio-frequency(RF)biasanddirect-current(DC)bias,respectively.Onthebasisofthecriticalroleofangulardistributionofionsorneutrals,thewaferprofileevolutionhasbeensimulatedfordifferentvariancesofangles.Observedmicrotrenchinghasbeenwellreproducedinthesimulator.Theratioofneutralstoionshasbeenconsideredandtheresultshowsthatbecausetheneutralsarenotacceleratedbyanelectricfield,theirenergyismuchlowercomparedwithions,sotheyareeasilyreflectedonthesurfaceofSiO2,whichmakesthetrenchshallower.

简介：Dielectric-barrierdischarges(DBDs)inatmosphericpressureairhavebeenstudiedbyusingapower-frequencyvoltagesource.InthispapertheelectricalcharacteristicsofDBDsus-ingglassandaluminadielectricshavebeeninvestigatedexperimentally.AccordingtotheLissajousfiguresofvoltage-charges,itisdiscoveredthatthedischargepowerforanaluminadielectricismuchhigherthanthatforaglassdielectricatthesameappliedvoltage.Also,thevoltage-currentcurvesoftheglassandaluminadielectricsconfirmthefactthatthedielectricbarriersbehavelikesemiconductingmaterialsatcertainappliedvoltages.