简介：TransientthermalimpedanceofGaN-basedhigh-powerwhitelightemittingdiodes(LEDs)iscreatedusingathermaltransienttester.Anelectro-thermalsimulationshowsthatLEDjunctiontemperature(JT)risestoaverylowdegreeunderlowdutycyclepulsedcurrent.AtthesameJT,emissionpeaksareequivalentatpulsedandcontinuouscurrents.Moreover,thediferenceinpeakwavelengthwhenaLEDisdrivenbypulsedandcontinuouscurrentsinitiallydecreasesthenincreaseswithincreasingpulsewidth.Thus,selectinganappropriatepulsewidthdecreaseserrorsinJTmeasurement.
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