简介：Anultrasensitivemetamaterialsensorbasedondouble-slotverticalsplitringresonators(DVSRRs)isdesignedandnumericallycalculatedintheterahertzfrequency.ThisDVSRRdesignproducesafundamentLCresonancewithaqualityfactorofabout20whentheincidencemagneticfieldcomponentnormaltotheDVSRRarray.TheresonantcharacteristicsandsensingperformanceoftheDVSRRarraydesignaresystematicallyanalyzedemployingacontrastmethodamongthreesimilarverticalsplitringresonator(SRRs)structures.Theresearchresultsshowthattheeliminationofbianisotropy,inducedbythestructuralsymmetryoftheDVSRRdesign,helpstoachieveLCresonanceofahighqualityfactor.LiftingtheSRRsupfromthesubstratesharplyreducesthedielectriclossintroducedbythesubstrate.AllthesefactorsjointlyresultinsuperiorsensitivityoftheDVSRRtotheattributesofanalytes.Themaximumrefractiveindexsensitivityis788GHz/RIUor1.04×10~5nm∕RIU.Also,theDVSRRsensormaintainsitssuperiorsensingperformanceforfabricationtolerancerangingfrom-4%to4%andwiderangeincidenceanglesupto50°underbothTEandTMilluminations.

简介：Inthispaper,normalincidenceverticalp-i-nphotodetectorsonagermanium-on-insulator(GOI)platformweredemonstrated.Theverticalp-i-nstructurewasrealizedbyion-implantingboronandarsenicatthebottomandtopoftheGelayer,respectively,duringtheGOIfabrication.Abruptdopingprofileswereverifiedinthetransferredhigh-qualityGelayer.Thephotodetectorsexhibitadarkcurrentdensityof~47mA∕cm~2at-1Vandanopticalresponsivityof0.39A/Wat1550nm,whichareimprovedcomparedwithstate-of-the-artdemonstratedGOIphotodetectors.Aninternalquantumefficiencyof~97%indicatesexcellentcarriercollectionefficiencyofthedevice.Thephotodetectorswithmesadiameterof60μmexhibita3dBbandwidthof~1GHz,whichagreeswellwiththeoreticalcalculations.Thebandwidthisexpectedtoimproveto~32GHzwithmesadiameterof10μm.ThisworkcouldbesimilarlyextendedtoGOIplatformswithotherintermediatelayersandpotentiallyenrichthefunctionaldiversityofGOIfornear-infraredsensingandcommunicationintegratedwithGeCMOSandmid-infraredphotonics.