简介：Ｒｏｔａｔｉｏｎ　ｉｎ　Ｒｅａｃｔｉｏｎ　１９Ｆ＋５１ＶＲｏｔａｔｉｏｎｉｎＲｅａｃｔｉｏｎ１９Ｆ＋５１Ｖ￥ＷａｎｇＱｉ；ＬｕＪｕｎ；ＸｕＨｕｓｈａｎ；ＬｉＳｏｎｇｌｉｎ；ＺｈｕＹｏｎｇｔａｉａｎｄＺｈａｎｇＹｕｈｕＩｎｄＬｓｓｉ...

简介：3个不同的年龄20、30、40，不同的爱好，不同的经历，却在同样的城市，同样为了自己的灵感，选择了同样的maneger生活。

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简介：Theeffectofbismuth（Bi）forbothVO2+/VO2+andV3+/V2+redoxcouplesinvanadiumflowbatteries（VFBs）hasbeeninvestigatedbydirectlyintroducingBionthesurfaceofcarbonfelt（CF）.TheresultsshowthatBihasnocatalyticeffectforVO2+/VO2+redoxcouple.Duringthefirstchargeprocess,BiisoxidizedtoBi3+（neverreturnbacktoBimetalinthesubsequentcycles）duetothelowstandardredoxpotentialof0.308V（vs.SHE）forBi3+/BiredoxcouplecomparedwithVO2+/VO2+redoxcoupleandBi3+exhibitno（orneglectable）electro-catalyticactivity.Additionally,therelationshipbetweenBiloadingandelectrochemicalactivityforV3+/V2+redoxcouplewasstudiedindetail.2wt%Bi-modifiedcarbonfelt（2%-BiCF）exhibitsthehighestelectrochemicalactivity.Usingitasnegativeelectrode,ahighenergyefficiency（EE）of79.0%canbeachievedatahighcurrentdensityof160mA/cm2,whichis5.5%higherthanthepristineone.Moreover,theelectrolyteutilizationratioisalsoincreasedbymorethan30%.Eventhecelloperatedat140mA/cm2forover300cycles,theEEcanreach80.9%withoutobviousfluctuationandattenuation,suggestingexcellentcatalyticactivityandelectrochemicalstabilityinVFBs.

简介：金属V作为贮氢材料具有良好的增压性能因而在ICF靶丸制备工艺中备受关注，但是金属V难活化，严重影响了其在增压材料方面的应用。为了改善金属V的活化性能，向金属V中掺杂少量的金属Ni以期达到对其改性和改善其贮氢性能的目的。

简介：全部的内部分区和(尖端)为~(12)在温度被计算直到6000KC~(16)O_2。用计算分区函数，我们生产ν_的线紧张~(12)的3乐队在几高温度的C~(16)O_2。结果证明计算的线紧张在在直到3000K的温度的HITRAN数据库的对那些的很好的同意，它在高温度为尖端和线紧张的计算提供强壮的支持。然后，计算被扩大推进高温度，和ν_的模仿的系列~(12)的3乐队在5000和6000K的C~(16)O_2被报导。

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简介：Vanadiumalloys,especiallythatofV4Cr4Ti,aresupposedasthepromisingcandidatestructuralmaterialforfusionapplicationsfortheirgoodthermalproperties,hightemperaturestrengthandtheinherentlowactivationcharacteristics.However,inrecent

简介：Vanadiumalloys(V-Cr-Tiseries)areimportantcandidatematerialsforblanketcomponentsoffusionreactorsduetotheirlowactivationandhighstrengthatelevatedtemperatures.Low-temperatureirradiationembrittlementdeterminestheoperationtemperaturelimitofVanadiumalloysfortheapplicationtostructuralmaterialsoffusionreactorsirradiationresponseofvanadiumalloysneedstobeclarifiedfortheirapplication.Inthepresentstudy,specimensoftwoalloys(V-4Cr-4TiandV-5Cr-5Ti)wereirradiatedwithenergeticHeionsandheavyionstounderstandhardeningofthealloysduetoheliumaccumulationandcascadedamageproduction.

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简介：Broadband（1.6–18THz）terahertztime-domainspectroscopy（THz-TDS）andtime-resolvedterahertzspectroscopy（TRTS）wereperformedona54μmthickchalcogenideglass(As30Se30Te40)samplewithatwo-colorlaser-inducedairplasmaTHzsystemintransmissionandreflectionmodes,respectively.Twoabsorptionbandsat2–3and5–8THzwereobserved.TRTSrevealsanultrafastrelaxationprocessofthephotoinducedcarrierresponse,welldescribedbyarateequationmodelwithafiniteconcentrationofmid-bandgaptrapstatesforself-trappedexcitons.ThephotoinducedconductivitycanbewelldescribedbytheDrude–Smithconductivitymodelwithacarrierscatteringtimeof12–17fs,andweobservesignificantcarrierlocalizationeffects.Afastrefractiveindexchangewasobserved100fsbeforetheconductivityreacheditsmaximum,with2ordersofmagnitudelargeramplitudethanexpectedfortheopticallyinducedTHzKerreffect,indicatingthatfreecarriersareresponsibleforthetransientindexchange.

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简介：Accordingtothewell-establishedlight-to-electricityconversiontheory,resonantexcitedcarriersinthequantumdotswillrelaxtothegroundstatesandcannotescapefromthequantumdotstoformphotocurrent,whichhavebeenobservedinquantumdotswithoutap–njunctionatanexternalbias.Here,weexperimentallyobservedmorethan88%oftheresonantlyexcitedphotocarriersescapingfromInAsquantumdotsembeddedinashort-circuitedp–njunctiontoformphotocurrent.Thephenomenoncannotbeexplainedbythermionicemission,tunnelingprocess,andintermediate-bandtheories.Anewmechanismissuggestedthatthephotocarriersescapedirectlyfromthequantumdotstoformphotocurrentratherthanrelaxtothegroundstateofquantumdotsinducedbyap–njunction.Thefindingisimportantforunderstandingthelow-dimensionalsemiconductorphysicsandapplicationsinsolarcellsandphotodiodedetectors.

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简介：TheGroupofEnergyMaterials(GEM)inIMPisengagedintheirradiationresponseofmaterialscandidatetoadvancednuclearenergysystems(GenIV,fusionreactors).Themajorprogressofresearchinourgroupin2016isintheirradiationhardening/embrittlementofoxide-dispersion-strengthened(ODS)ferriticsteelsandVanadiumalloys,andinthemechanismsunderlyingdamageproductioninsiliconcarbide(SiC)fibers.Abriefdescriptionisgivenasfollows.1.EffectoftheoxidenanoparticlesontheirradiationhardeningofODSferriticsteelsTheinfluenceofoxidenanoparticlesontheirradiationresistanceofODSferriticsteelsisacrucialissuefortheupgradeofODSsteels.

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简介：Duetolowactivationcharacteristics,desirablehigh-temperaturestrength,goodresistancetoradiationdamageandusablefabricationproperties,vanadium(V)alloysareattractivecandidatestructuralmaterialsforfusionreactors[1].Irradiationinducedhardening/embrittlementatlowtemperatureisamajorproblemforthematerialsapplicationinfusionreactor[2].Inthisstudy,H/Heionswithvariousenergieswereusedtoirradiateapurevanadium(V)andaValloy(V-4Ti)toobtainadamageplateaufromsamplesurfacetothedepthof1.5m,asshowninFig.1[3].Thedetailsofirradiationparameters(energies,fluences)forHandHeionsareshowninTable1.NanoindentationwasperformedtoinvestigatethehardeningbehaviorofV-4TialloyandpureVunderirradiation.