简介：WepresentthetemperaturedependentelectricaltransportmeasurementsofAg/Si（111）-（√3×√3）R30°bytheinsitumicro-four-pointprobemethodintegratedwithscanningtunnelingmicroscopy.Thesurfacestructurecharacterizationsshowhexagonalpatternsatroomtemperature,whichsupportstheinequivalenttriangle（IET）model.Ametal-insulatortransitionoccursat-115K.Thelowtemperaturetransportmeasurementsclearlyrevealthestronglocalizationcharacteristicsoftheinsulatingphase.
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