WeproposeascalingtheoryforsinglegateAlInSb/InSbhighelectronmobilitytransistors(HEMTs)bysolvingthetwo-dimensional(2D)Poissonequation.Inourmodel,theeffectiveconductivepatheffect(ECPE)istakenintoaccounttoovercometheproblemsarisingfromthedevicescaling.Thepotentialintheeffectiveconductingpathisdevelopedandasimplescalingequationisderived.ThisequationissolvedtoobtaintheminimumchannelpotentialΦdeff,minandthenewscalingfactorαtomodelthesubthresholdbehavioroftheHEMTs.ThedevelopedmodelminimizestheleakagecurrentandimprovesthesubthresholdswingdegradationoftheHEMTs.TheresultsoftheanalyticalmodelareverifiedbynumericalsimulationwithaSentaurusTCADdevicesimulator.
