Uniformity of TiN Films Fabricated by Hollow Cathode Discharge

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摘要 Titaniumnitride(TIN)filmsweredepositedonAISI304stainlesssteelsubstratesusinghollowcathodeplasmaphysicalvapordeposition(HC-PVD).TitaniumwasintroducedbyerodingtheTicathodenozzleandTiNwasformedinthepresenceofanitrogenplasmaexcitedbyradiofrequency(RF).Thesubstratebiasvoltagewasvariedfrom0to-300Vandtheuniformityinfilmthickness,surfaceroughness,crystalsize,microhardnessandwearresistanceforthefilmwithadiameterof20mmwasevaluated.Althoughthecentralzoneoftheplasmahadthehighestiondensity,thefilmthicknessdidnotvaryappreciablyacrossthesample.Theresultsfromatomicforcemicroscopy(AFM)revealedalowsurfaceroughnessdominatedbyanisland-likemorphologywithasimilarcrystalsizeontheentiresurface.Highermicrohardnesswasmeasuredatthecentralzoneofthesample.Thesampletreatedat-200Vhadexcellenttribologicalpropertiesanduniformity.
机构地区 不详
出版日期 2010年02月12日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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