Effect of Growth Time on Properties of GaN Micro-grains Grown by Hot-wall CVD Method-中国期刊网

摘要 GaNmicrocrystallinegrainsweregrownbyhot-wallchemicalvapordepositiononSi(111)substrate.Thesegrainswithdiametersof2-4μmweredetectedbyscanningelectronmicroscopy.X-raydiffraction,Fouriertransformationinfraredtransmissionspectroscopyandphotoluminescencewereusedtoanalyzethestructure,compositionandtheopticalpropertiesofthesamples.TheresultsshowthatthemicrocrystallinegrainsarehexagonalwurtziteGaN,andthepropertyofthegrainswasgreatlyaffectedbythegrowthtime.

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Effect of Growth Time on Properties of GaN Micro-grains Grown by Hot-wall CVD Method

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Effect of Growth Time on Properties of GaN Micro-grains Grown by Hot-wall CVD Method

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