摘要
Two-dimensionalatomic-layeredmaterialisarecentresearchfocus,andsinglelayerTa2O5usedasgatedielectricinfield-effecttransistorsisobtainedviaassembliesofTa2O5nanosheets.However,theelectricalperformanceisseriouslyaffectedbyelectronicdefectsexistinginTa2O5.Therefore,spectroscopicellipsometryisusedtocalculatethetransitionenergiesandcorrespondingprobabilitiesfortwodifferentchargedoxygenvacancies,whoseexistenceisrevealedbyx-rayphotoelectronspectroscopyanalysis.SpectroscopicellipsometryfittingalsocalculatesthethicknessofsinglelayerTa2O5,exhibitinggoodagreementwithatomicforcemicroscopymeasurement.NondestructiveandnoncontactspectroscopicellipsometryisappropriatefordetectingtheelectricaldefectslevelofsinglelayerTa2O5.
出版日期
2016年04月14日（中国期刊网平台首次上网日期，不代表论文的发表时间）
