Field Emission Properties of Nitrogen-doped Amorphous Carbon Films

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摘要 Nitrogen-dopedamorphouscarbonthinfilmsaredepositedontheceramicsubstratescoatedwithTifilmbyusingdirectcurrentmagnetronsputteringtechniqueatN2andArgasmixtureatmosphereduringdeposition.Thefieldemissionpropertiesofthedepositedfilmshavebeeninvestigated.Thethresholdfieldaslowas5.93V/μmisobtainedandthemaximumcurrentdensityincreasesfrom4μA/cm2to20.67μA/cm2at10.67V/μmcomparingwithundopedamorphousfilm.Theresultsshowthatnitrogendopingplaysanimportantroleinfieldemissionofamorphouscarbonthinfilms.
机构地区 不详
出版日期 2002年04月14日(中国期刊网平台首次上网日期,不代表论文的发表时间)
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