简介:我们认识到NiCo2由激光照耀的O4nanomaterialsNiCo2有不同集中的O4暂停。结果表明同样准备的样品是有568nm和优异dispersity的最大的平均尺寸的需要的范围,它在0.30JDS的精力密度被获得)。Obwohl死ErkrankungenvieleGemeinsamkeitenaufweisen(Fiebersch浭湥慦獳湵?浉畭歮浯牰浯瑩楴牥湵?楢杲?浩敭?楥?牥???獥删獩歩????釧????????闧?郦????駥?釧?闦??駥?跧???闦?臧?臧????駥膹?郦?飧?蓦???釧?釧?蓦???跧?觧??跧?????觧?釧??闦??闦?觧?郧?闦???跧???釧????触?跧??趥觧?鷦??
简介:作者勃勃赵赵名人访谈努力促进中国电子封装事业繁荣发展快速反应、真诚务实是华天发展的法宝期(页)五(1)六(1)专家论坛电子封装技术的新进展新型微电子封装技术知识经济下的管理变革与创新NewICPaekage,assemblytechniquebymeansofa“blind”Alignment“fliP一ehiP”methodandassemblingfaeilities张蜀平高尚通文」逸明郑宏宇杨克武钱枫林VladimirV.Novikov一(3)一(10)三(1)四(1)Top企业报道瑞萨;加强中国市场的整体统一管理战略瑞萨的Slp(Solution
简介:ThroughusingbothCr4+:YAGandGaAssaturableabsorbers,adiode-pumpeddoublepassivelyQ-switchedNd:GdVO4laserisrealizedandcomparedwithasinglepassivelyQ-switchedlaser.Thislasercangeneratesymmetricpulsetemporalprofilesandshorterpulses.Alaserpulsewidthof17nshasbeenachievedwiththeincidentpumppowerof8.5W.
简介:ThepatternofITOtransparentelectrodeofpixelcellsinTFTAMLCDisacriticalstepinthemanufacturingprocessofflatpaneldisplaydevices,thedevelopmentofsuitableplasmareactiveionetchingisnecessarytoachievehighresolutiondisplay.InthisworkweinvestigatedtheAr/CF4plasmaetchingofITOasfunctionofdifferentparameters.WedemonstratedtheabilityofthisplasmatoetchITOandachievedanetchingrateofabout3.73nm/min,whichisexpectedtoincreaseforlongpumpingdownperiod,andalsothroughadditionofhydrogenintheplasma.FurthermorewedescribedtheITOetchingmechanisminAr/CF4plasma.Theinvestigationofselectivityshowedtobeverylowoversiliconnitrideandsilicondioxidebutveryhighoveraluminum.