简介:Anultra-highspeed1:2demultiplexerforopticalfibercommunicationsystemsisdesignedutilizingtheIHP0.25μmSiGeBiCMOStechnology.Thelatchofthedemultiplexercorecircuitisresearched.Basedonthecurrentmeasurementcondition,ahigh-gainandwide-bandwidthclockbufferisdesignedtodrivelargeload.Transmissionlinetheoryforultra-highspeedcircuitsisusedtodesignmatchingnetworktosolvethematchingproblemamongtheinput,outputandinternalsignals.Thetransientanalysisshowsthatthisdemultiplexercandemultiplexone100Gb/sinputintotwo50Gb/soutputs.Thechipareaofitis0.7mm×0.47mm,theinputandoutputdataarebothat400mVP-PPCMLstandardvoltagelevel,andthepowerconsumptionoftheICis900mWatthepowersupplyof-4V.
简介:Thispaperpresentsanewarraystructureforestimatingtwo-dimensional(2-D)direction-of-arrivals(DOAs).ThestructureiscalledY-shapedarray,whichhas10%betteraccuracypotentialthanthenewly-developedL-shapedarray.Agreatmeritisitsabilitytoestimate2-DDOAswhicheverdirectionsthearrivingsignalscomefrom,comparedwithL-shapedarraywhoseperformancedependsonDOAs.Simulationresultsaregiventodemonstratetheperformanceofthenewarray.
简介:Aterahertz(THz)polarizerandswitchstructureisproposedbasedonthephasetransitionofvanadiumdioxide(VO2).WhenVO2isintheinsulationphase,theresonancefrequenciesoftheproposedstructureare1.49THzand1.22THzforthex-andy-polarization,respectively.ItcanperformasaTHzpolarizerwithextinctionratiosof52.5dBand17dBforthey-andx-polarization,respectively;WhenVO2transformsintometallicphase,theresonancefrequencyforx-polarizationwaveshiftsfrom1.49THzto1.22THz,whilethatremainsstillforthey-polarizationcomponent.Itmeansthatthestructurecanworkasapolarization-dependentTHzswitchwithahighextinctionratioof32dB.
简介:AninitialstructuredesignofMMI1×8opticalpowersplittersisreported.ThewaveguidematerialisSi-basedSiO2Ge-dopedanddepositedbyPECVDmethod.Embeddedstripstructureisimpliedinthesectiondesign.ByusingBPM-CAD,afavorableresultisobtainedthatthisdevicehasasounduniformityandfairlylowloss.Meanwhile,simulationsofdesignswithcertainchangedparametersisalsoimplementedforabetterdesignconfiguration.
简介:UnipolarresistiveswitchingbehaviorsoftheZnOandAl2O3/ZnOfilmsfabricatedonflexiblesubstratesbypulselaserdepositionwerestudiedinthispaper.Thefilmsweredepositedatroomtemperaturewithoutpost-annealingtreatmentduringtheprocess.XraydiffractionresultsindicatedthatZnOfilmhasadominantpeakat(002).ScanningelectronmicroscopyobservationshowedacolumnargrainstructureoftheZnOfilmtothesubstrate.ThebilayerdeviceofAl2O3/ZnOfilmshadstableresistiveswitchingbehaviorswithagoodenduranceperformanceofmorethan200cycles,highresistiveswitchingratioofover103atareadvoltageof0.1V,whichisbetterthanthatofthesingleoxidelayerdeviceofZnOfilm.Apossibleresistiveswitchingfilamentarymodewasdemonstratedinthispaper.TheconductionmechanismsofhighandlowresistancestatescanbeexplainedbyspacechargelimitedconductionandOhmic’sbehaviors.Theenduranceofthebilayer(BL)devicewasnotdegradeduponbendingcycles,whichindicatesthepotentialoftheflexibleresistiveswitchingrandomaccessmemoryapplications.
简介:Thesilicon-on-insulator(SOI)1×2Y-junctionopticalwaveguideswitchhasbeenproposedandfabricated,whichisbasedonthelargecross-sectionsingle-moderibwaveguidecondition,thewaveguide-vanishingeffectandthefree-carrierplasmadispersioneffect.Intheswitch,theSOItechniqueutilizersiliconandsilicondioxidethermalbondingandback-polishing.Theinsertionlossandextinctionratioofthedevicearemeasuredtobelessthan4.78dBand20.8dBrespectivelyatawavelengthof1.3μmandaninjectioncurrentof45mA.Responsetimeisabout160ns.
简介:Themixedl1/H2optimizationproblemforMIMO(multipleinput-multipleoutput)discrete-timesystemsisconsidered.Thisproblemisformulatedasminimizingthel1-normofaclosed-looptransfermatrixwhilemaintainingtheH2-normofanotherclosed-looptransfermatrixatprescribedlevel.ThecontinuitypropertyoftheoptimalvalueinrespecttochangesintheH2-normconstraintisstudied.Theexistenceoftheoptimalsolutionsofmixedll/H2problemisproved.Becausethesolutionofthemixedl1/H2problemisbasedonthescaled-Qmethod,itavoidsthezerointerpolationdifficulties.Theconvergentupperandlowerboundscanbeobtainedbysolvingasequenceoffinitedimensionalnonlinearprogrammingforwhichmanyefficientnumericaloptimizationalgorithmsexist.
简介:Anultrahighvacuumchemicalvapordeposition(UHV/CVD)systemisintroduced.SiGealloysandSiGe/Simultiplequantumwells(MQWs)havebeengrownbycold-wallUHV/CVDusingdisilane(Si2H6)andgermane(GeH4)asthereactantgasesonSi(100)substrates.ThegrowthrateandGecontentsinSiGealloysarestudiedatdifferenttemperatureanddifferentgasflow.ThegrowthrateofSiGealloyisdecreasedwiththeincreaseofGeH4flowathightemperature.X-raydiffractionmeasurementshowsthatSiGe/SiMQWshavegoodcrystallinity,sharpinterfaceanduniformity.Nodislocationisfoundintheobservationoftransmissionelectronmicroscopy(TEM)ofSiGe/SiMQWs.TheaveragedeviationofthethicknessandthefractionofGeinsingleSiGealloysampleare3.31%and2.01%,respectively.
简介:WefabricatepolycrystallineCu(In,Ga)Se2(CIGS)filmsolarcellsonpolyimide(PI)substrateattemperatureof450°Cwithsingle-stageprocess,andobtainapoorcrystallizationofCIGSfilmswithseveralsecondaryphasesinit.Forimprovingitfurther,thetwo-stageprocessisadoptedinsteadofthesingle-stageone.AnextraCu-richCIGSlayerwiththethicknessfrom100nmto200nmisgrownonthesubstrate,andthenanotherCu-poorCIGSfilmwiththicknessof1.5-2.0μmisdepositedonit.Withthemodificationoftheevaporationprocess,thegrainsizeofabsorberlayerisincreased,andtheadditionalsecondaryphasesalmostdisappear.Accordingly,theoveralldeviceperformanceisimproved,andtheconversionefficiencyisenhancedbyabout20%.
简介:Wetheoreticallypresenttheintrinsiclimitstoelectronmobilityinthemodulation-dopedAlGaN/GaNtwo-dimensionalelectrongas(2DEG)duetoeffectsincludingacousticdeformationpotential(DP)scattering,piezoelectricscattering(PE),andpolar-opticphononscattering(POP).WefindthatDEandPEarethemoresignificantlimitingfactorsatintermediatetemperaturesof40Kto250K,whilePOPbecomesdominantasroomtemperatureisapproached.Detailednumericalresultsarepresentedforthechangeofelectronmobilitywithrespecttotemperatureandcarrierdensity.Weconcludethatthesethreetypesofphononscattering,whicharegenerallydeterminedbythematerialpropertiesbutnotthetechnicalprocessing,arehardlimitstothe2DEGmobility.
简介:研究表明含氟气体的性质决定了原子氟(F)的转化效率,通常在CxFy气体中x的值越大,氟(F)的转化效率也就会越高。所以C3F8(八氟丙烷)比C2F6(乙氟烷)具有更高的利用效率,更少的PFC(全氟化物)的排放。文章主要研究在以四乙氧基硅烷(TOES)为基础的离子增强化学气相沉积(PlasmaEnhancedChemicalVaporDeposition,PECVD)的清洗制程中,利用分解效率高的C3F8气体取代C2F6气体。通过实验设计(DesignOfExperiment,DOE),调整腔体压力、射频(RF)功率、气体流量等参数,最终得到最优化的新清洗配方。应用到实际的量产中,有效地降低了成本,减少了PFC的排放。
简介:镓氮化物的大数量(轧)nanowires经由Ga2O3电影在一个石英试管在950点在氧化的铝层上扔了的ammoniating被准备了。当水晶的wurtzite由X光检查衍射,X光检查光电子spectrometry扫描电子显微镜和精选区域的电子衍射轧了,nanowires被证实了。传播电子显微镜(TEM)和扫描电子显微镜学(SEM)表明nanowires非结晶、不规则,与从30nm到直到十微米的80nm和长度的直径。精选区域的电子衍射显示有六角形的wurtzite结构的nanowire是单身者水晶。生长机制简短被讨论。