简介：Thecharacteristicsofhomogeneousdischargesinmixedgasesofhydrogendilutedsilaneandargonatatmosphericpressureareinvestigatednumericallybasedonaone-dimensionalfluidmodel.Thismodeltakesintoaccounttheprimaryprocessesexcitationandionization,sixteenreactionsofradicalswithradicalsinsilane/hydrogen/argondischargesandtherefore,canadequatelyrepresentthedischargeplasma.Weanalyzetheeffectsofveryhighfrequency(VHF)onthedensitiesofspecies(e,H,SiH3,SiH+3andSiH2)insuchdischargesusingthemodel.ThesimulationresultsshowthatthedensitiesofSiH3,SiH+3,H,andSiH2increasewithVHFwhentheVHFrangesfrom30MHzto150MHz.Itisfoundthatthedepositionrateofμc-Si:HfilmdependsontheconcentrationofSiH3,SiH+3,SiH2,andHintheplasma.TheeffectsofVHFonthedepositionrateandtheamountofcrystallizedfractionforμc-Si:Hfilmgrowthisalsodiscussedinthispaper.