简介：Thedependencesofradiationinduceddefectsonirradiationtemperatureupto700℃at15dpaandonirradiationdoseupto85dpaatroomtemperaturehavebeeninves-tigatedbytheheavyionirradiationandthepositronannihilationlifetimespectroscopyfortheCLAM.Avoidsizepeakisobservedat～500℃wherethevacancyclustercontains9vacanciesandhasanaveragediameterof0.59nm.Thesizeofthevacancyclustersincreaseswiththeincreaseofirradiationdoseatroomtemperature,andthevacancyclusterat85dpaconsistsof9vacanciesandreachesasizeof0.60nmindiameter.TheabsolutevaluesofthevoidsizeatthepeakandtheincreaseofvoidsizewithdoseintheCLAMsteelarenegligiblecomparedtothoseofthenormalstainlesssteels,indicatingthattheCLAMsteelhasgoodradiationresistantproperty.

简介：Amorphoussilicon(a-Si),nanocrystallinesilicon(nc-Si)andhydrogenatednanocrys-tallinesilicon(nc-Si:H)filmswerefabricatedbyusingchemicalvapordeposition(CVD)system.Thea-Siandnc-Sithinfilmswereirradiatedwith94MeVXe-ionsatfluencesof1.0×1011ions/cm-2,1.0×1012ions/cm-2and1.0×1013ions/cm-2atroomtemperature(RT).Thenc-Si:Hfilmswereirradiatedwith9MeVXe-ionsat1.0×1012Xe/cm-2,1.0×1013Xe/cm-2and1.0×1014Xe/cm-2atRT.Forcomparison,mono-crystallinesilicon(c-Si)sampleswerealsoirradiatedatRTwith94MeVXe-ions.AllsampleswereanalyzedbyusinganUV/VIS/NIRspectrometerandanX-raypowderdiffractometer.Variationsoftheopticalband-gap(Eg)andgrainsize(D)versustheirradiationfluencewereinvestigatedsystematically.Theobtainedresultsshowedthattheopticalband-gapsandgrainsizeofthethinfilmschangeddramaticallywhereasnoobservablechangewasfoundinc-SisamplesafterXe-ionirradiation.Possiblemechanismunderlyingthemodificationofsiliconthinfilmswasbrieflydiscussed.

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简介：TheaccumulationofHeonaWsurfaceduringkeV-Heionirradiationhasbeensimulatedusingclusterdynamicsmodeling.Thisisbasedmainlyonratetheoryandimprovedbyinvolvingdifferenttypesofobjects,adoptingup-to-dateparametersandcomplexreactionprocesses,aswellasconsideringthediffusionprocessalongwithdepth.Thesenewfeaturesmakethesimulatedresultscompareverywellwiththeexperimentalones.Theaccumulationanddiffusionprocessesareanalyzed,andthedepthandsizedependenceoftheHeconcentrationscontributedbydifferenttypesofHeclustersisalsodiscussed.TheexplorationofthetrappinganddiffusioneffectsoftheHeatomsishelpfulinunderstandingtheevolutionofthedamagesinthenear-surfaceofplasma-facingmaterialsunderHeionirradiation.

简介：AlONnanolayersaresynthesizedonAlsubstratebytheirradiationofenergeticnitrogenionsusingplasmafocusing.Samplesareexposedtomultiple(5,10,15,20and25)focusshots.Ionenergyandionnumberdensityrangefrom80keVto1.4MeVand5.6×1019m-3to1.3×1019m-3,respectively.Moreover,theefectofcontinuousannealing(473Kand523K)onanAlNsurfacelayersynthesizedwith25focusshotsisalsoexamined.ThemainfeaturesoftheX-raydifraction(XRD)patternswithincreasingfocusshotsare:(i)variationinthecrystallinityofAlNalong(111),(200)and(311)planes,(ii)increasingaveragecrystallitesizeofAlN(111)plane,and(iii)stressrelaxationobservedinAlN(111)and(200)planes.ThecrystallinityofAlNsurfacelayeriscomparativelybetterat473Kannealingtemperature.Abroadeneddifractionpeakrelatedtoanaluminiumoxidephaseshowingweakcrystallinityisobservedfor15focusshotswhilenon-boundedoxidesarepresentinallotherdepositedlayers.RamanandFouriertransforminfraredspectroscopy(FTIR)analysisconfirmthepresenceofAlNandAl2O3forthesurfacelayerannealedat473Ktemperature.RamananalysisshowsthattheoverlappingofAlNandAl2O3resultsinthedevelopmentofresidualstresses.Scanningelectronmicroscope(SEM)resultsdemonstratethattheformationofroundedgrains(rangefrom20nmto200nm)andvariationsintheirmicrostructuresfeaturesdependontheincreasingnumberoffocusshots.Decompositionoflargerclustersintosmalleronesisobserved.

简介：GaInP/GaAs/Getriple-junctionsolarcellswereirradiatedwith50keVand100keVprotonsatfluencesof5×1010cm-2,1×1011cm-2,1×1012cm-2,and1×1013cm-2.Theirperformancedegradationisanalyzedusingcurrent-voltagecharacteristicsandspectralresponsemeasurements,andthenthechangesinIsc,Voc,Pmaxandthespectralresponseofthecellsareobservedasfunctionsofprotonirradiationfluenceandenergy.Theresultsshowthatthespectralresponseofthetopcelldegradesmoresignificantlythanthatofthemiddlecell,and100keVproton-induceddegradationratesofIsc,VocandPmaxarelargercomparedwith50keVprotonirradiation.