简介:Poroussiliconpillararray(PSPA)sampleswhichareidealsubstantialmaterialswithdominantelectronicandluminescencepropertieswerepreparedbysurfaceetchingmethod.ZnOnanorodswithorwithoutMndopinggrownuniformlyandalignedontoPSPAregardlessoflatticematchingshowvariousphotoluminescence(PL)properties.ThedopedMnionsinZnOnanorodsweredirectlyobservedbyX-rayphotoelectronspectroscopy(XPS),andZnOstructuresweredetectedbyX-raydiffraction(XRD).Asthedopingconcentrationincreases,XRDpeaksofZnOnanorodsshifttolowangle.TheinfluencesofdopingMnionsonluminescencepropertiesofZnOnanorodswereinvestigated.Exceptfortheultraviolet(UV)PLband,thebroadPLbandisobservedatvisibleregion.Thebandcouldbedividedintothreeseparatebands(orange,greenandred)byLorentziandeconvolution.TheintensityoforangePLbandfirstlyincreasesthendecreases,andthengetsthemaximumatthedopingMn-to-Znmolarratioof2.0:100.0whichisthemosteffectivedopingconcentration.ThegreenPLbandisattributedtozincvacancyofZnO,theorangePLbandtoMnionsrecombinationofitself,andtheredPLbandtooxygenvacancyofZnO,respectively.AstheMn-dopedZnOnanorodscouldemityellowgreenluminescenceexcitedbyUVradiation,anddopedMnionscouldimprovethecolorrenderingindexoftheluminescence,thenanorodscouldbeusedaspromisingwhite-lightemittersinthefuture.