学科分类
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5 个结果
  • 简介:PECVD在玻璃底层上准备的非结晶的硅电影被退火的常规炉子并且快速的热退火(RTA)分别地使结晶。夫罗姆塞·拉曼系列,X光检查衍射和扫描电子显微镜,谷物尺寸在两种技术在850℃被使结晶,这被发现。RTA做的薄膜是光滑的并且完成式组织,薄膜由FA退火了有高度结构的混乱。大约30nm的一种平均谷物尺寸被两种技术获得。

  • 标签: 半导体技术 材料 PECVD 硅薄膜
  • 简介:DesignIssuesforUseofSolidStateTransmitterRadarsintheTerminalAirspace¥E.LeeCole&LawrenceJ.Friz(WestinghouseElectricCorporation...

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  • 简介:ThemorphoussiliconfilmspreparedbyPECVDatsubstratetemperaturesof30℃havebeencrystallizedbyrapidthermalannealingmethod,thebudgetoftime-temperatureintheannealingprocessis600℃for120s,850℃for120s,and950℃for120s.Theresultsindicatethecrystallizationat850℃and950℃arebetterasshowninmicro-Ramanscatteringandscanningelectronicmicroscope.

  • 标签: 固相晶化 非晶硅 快速热退火 PECVD
  • 简介:Magnesiumoxide(MgO)nanowiresweresynthesizedonthegold-coatedSi(100)andMgO(100)substratesatlowertemperature(600℃)bypulsedliquidinjectionmetalorganicchemicalvapordeposition(MOCVD).Thegoldcatalystcouldbefoundonthetipsofnanowires,whichpresentsthevapor-liquid-solid(VLS)growthmechanism.Reactivespecies(oxygenormagnesium)havestrongeffectsonthegrowthofnanowires.Abundantreactivespecieskilltheverticallyalignednanowirestoberandomlyalignedonesorevenchangetheverticalgrowthmodetothehorizontalgrowthmodewithsurface-parallelnanowires.Usually,nanowireswithlargeraspectratio(>10,aspectratio=length/diameter),higherdensity(>500/μm2)andsmallerdiameter(≤20nm)canbeeasilysynthesizedwithlongerinjectionperiod(≥2s),smallerinjectionmass/period(≤4.6mg)andsuitableoxygenpartialpressure(2.4Torr).

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  • 简介:Theconfinementlossandbendlosspropertiesofall-solidphotonicbandgapfiberswithanarrayofringsdopedwithhighindexmaterialareinvestigated.Thecalculatedresultsshowthatforaspecificstructure,theconfinementlossandthecriticalbendradiusarereducedsimultaneouslyinsomebandgapsbyincreasingtheinnerdiameterofring,whichprovidesausefulguideandatheoreticalbasisfordesigninglargemodeareafiberswithlowloss.

  • 标签: 光子带隙光纤 损耗性能 全固态 阵列 计算结果 弯曲