简介：Ananalysisprogramforpositronannihilationlifetimespectraisonlyapplicabletoisolateddefects,butisofnouseinthepresenceofdefectivecorrelations.Suchlimitationshavelongcausedproblemsforpositronresearchersintheirstudiesofcomplicateddefectivesystems.Inordertosolvethisproblem,weaimtotakeasemiconductormaterial,forexample,toachieveacredibleaveragelifetimeofsinglecrystalsiliconunderplasticdeformationatdifferenttemperaturesusingpositronlifetimespectroscopy.Byestablishingreasonablepositrontrappingmodelswithdefectivecorrelationsandsortingoutfourlifetimecomponentswithmultipleparameters,aswellastheirrespectiveintensities,informationisobtainedonthepositrontrappingcenters,suchasthepositrontrappingratesofdefects,thedensityofthedislocationlinesandcorrelationbetweenthedislocationlines,andthevacancydefects,byfittingwiththeaveragelifetimewiththeaidofMatlabsoftware.Theseresultsgivestronggroundsfortheexistenceofdislocation-vacancycorrelationinplasticallydeformedsilicon,andlayatheoreticalfoundationfortheanalysisofpositronlifetimespectrawhenthepositrontrappingmodelinvolvesdislocation-relateddefects.