简介:Aconductionchannelmodelispropsedtoexplainthehighconductivitypropertyofnc-Si:H.Detailedenergybanddiagramisdevelopedbasedontheanalysisandcalculation,andtheconductivityofthenc-Si:Hwasthenanalysedonthebasisofenergybandtheory.Itisassumedthattheconductivityofthenc-Si:Hstemsfromtwoparts:theconductanceoftheinterface,wherethetransportmechanismisidentifiedasathermal-assistedtunnelingprocess,andtheconductancealongthechannelaroundthegrain,whichmainlydeterminedthehighconductivityofthenc-Si:H.Theconductivityofnc-Si:Hiscalculatedandcomparedwiththeexperimentdata.Thetheoryisinagreementwiththeexperiment.
简介:Ananalysisisgiventoexplaintheinstabilityofthehighconductivitypropertyofnc-Si:Hfabricated.Detaileddiscussioniscarriedoutconcentratingontheconductivityandgrowthmechanism.Itisassumedthattheinstabilityoftheconductivityofthenc-Si:Hstemsfromtwopart:thephasetransitionfromnanocrystallitesintoa-Si:H,andtheoxygenincorporationofthethinlayerofthefilm,whichcontributesmoretotheeffectwhenthefilmsufferstheexposuretoair.Thetheoryisinagreementwiththeexperimentandmeasurement.